NDLI: Sulfurization approach using sulfur vapor, graphite box and HS gas atmospheres for co-sputtered Cu thin film

Content Provider	IEEE Xplore Digital Library
Author	Khalkar, A. Kwang-Soo Lim Seong-Man Yu Jin Hyeok Kim Ji-Beom Yoo
Copyright Year	2014
Description	Author affiliation: SKKU Adv. Inst. of Nanotechnol. (St.), Sungkyunkwan Univ., Suwon, South Korea (Khalkar, A.; Kwang-Soo Lim; Seong-Man Yu; Ji-Beom Yoo) \|\| Dept. of Mater. Sci. & Eng., Chonnam Nat. Univ., Gwangju, South Korea (Jin Hyeok Kim)
Abstract	In this work we have prepared $Cu_{2}ZnSnS_{4}$ (CZTS) precursor by magnetron co-sputtering using Cu, SnS and ZnS sputter targets. We employed three sulfurization approaches to prepare CZTS thin film and further compared their characterizations. In one approach, the precursor was sulfurized in a two zone tubular furnace directly exposed to the S vapor with $N_{2}$ gas. In second approach, similar precursor was sulfurized in the same furnace but inside a graphite box together with 500mg of sulphur powder was evaporated in $N_{2}$ gas inert atmosphere. Finally, in third approach precursor was sulfurized in the same furnace and was directly exposed to the $H_{2}S$ gas (balanced with 97 vol% of $N_{2}$ gas) at flow rate of 50sccm. All sulphurization approaches were performed at temperature of 550°C for 60 min at atmospheric pressure. We have analyzed that the film sulfurized in $H_{2}S$ gas leads to compact grain structure, desired elemental composition, good optical and electrical characterization than when sulfurization was carried out in S vapor and S vapor in a graphite box under same thermodynamic conditions. The elemental composition of film was also analyzed by Secondary ion mass spectrometry (SIMS). The film was further analyzed by X-ray diffractometer (XRD), Raman scattering, X-ray photoelectron spectroscopy (XPS), Transmission electron microscopy (TEM) which showed $Cu_{2}ZnSnS_{4}$ is the kesterite phase. The optical and electrical properties clearly shows CZTS film with an optical band gap of 1.5 eV, absorption coefficient of $8.5×10^{4}$ $cm^{-1}$ and p-type semiconducting behavior with charge carrier concentration of $3.09×10^{17}$ $cm^{-3}.$
Starting Page	0390
Ending Page	0394
File Size	901101
Page Count	5
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6924940
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tin Zinc Furnaces Annealing Optical films Optical scattering x-ray diffractometer Cu2ZnSnS4 thin film Hall Effect magnetron co-sputtering optical absorption coefficient optical band gap Raman scattering thin film
Content Type	Text
Resource Type	Article

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