NDLI: Epitaxial growth of CZTS on Si substrates investigated with electron backscatter diffraction

Content Provider	IEEE Xplore Digital Library
Author	Moutinho, H.R. Young, M. Harvey, S. Jiang, C.-S. Perkins, C. Wilson, S. Al-Jassim, M.M. Repins, I.L. Teeter, G.
Copyright Year	2014
Description	Author affiliation: Nat. Renewable Energy Lab., Golden, CO, USA (Moutinho, H.R.; Young, M.; Harvey, S.; Jiang, C.-S.; Perkins, C.; Wilson, S.; Al-Jassim, M.M.; Repins, I.L.; Teeter, G.)
Abstract	The objective of this work is to develop procedures for growing high-quality epitaxial $Cu_{2}ZnSnS_{4}$ thin films. We deposited our films by molecular beam epitaxy, with different growth parameters, on [100]- and [111]-oriented Si substrates. To study the growth of the films, we used electron backscatter diffraction. We found that, under the right conditions, we were able to grow epitaxial [111]-oriented CZTS films that had a common characteristic: the existence of two domains, both with the same orientation, but rotated by 60° between each other. In this paper, we investigate the reliability of the EBSD analysis to study different domains in CZTS films, and correlate the film growth with deposition parameters, attempting to gain insight on the characteristics of the boundaries between the two domains.
Starting Page	2379
Ending Page	2383
File Size	8462243
Page Count	5
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6925405
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Epitaxial growth Substrates Silicon Diffraction Lattices epitaxial growth CZTS EBSD
Content Type	Text
Resource Type	Article

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