NDLI: Local conductivity characteristics of individual ErAs island for solar cell tunnel junction application

Content Provider	IEEE Xplore Digital Library
Author	Chao-Yu Hung Sogabe, T. Miyashita, N. Shoji, Y. Naitoh, S. Okada, Y.
Copyright Year	2014
Description	Author affiliation: Res. Center for Adv. Sci. & Technol. (RCAST), Univ. of Tokyo, Tokyo, Japan (Chao-Yu Hung; Sogabe, T.; Miyashita, N.; Shoji, Y.; Naitoh, S.; Okada, Y.)
Abstract	Conductive atomic force microscopy has been used to study both the topography and electronic properties of 30nm scale ErAs islands grown by molecular beam epitaxy (MBE) on n-type GaAs substrate. A calibration method was realized to determine the growth rate of the ErAs so that we can control the size of the ErAs islands. Current flow images and surface profile around ErAs islands were simultaneously measured for local conductive distribution corresponding to real space profile, where the correlations are revealed. The conductance on ErAs islands is found to be larger than that on the GaAs buffer layer from I-V characteristics via voltage sweeping from negative to positive voltage. The I-V curve and resistance of the tunnel junction with ErAs were evaluated. It exhibits that less voltage loss can be achieved even higher than 1000 suns.
Starting Page	0228
Ending Page	0232
File Size	1106031
Page Count	5
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6925637
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Size measurement Indexes Nanostructures Microscopy Atomic layer deposition Atomic measurements tunnel junction erbium arsenide conductive AFM I–V characteristics molecular beam epitaxy (MBE)
Content Type	Text
Resource Type	Article

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