NDLI: Challenges in deposition of wide band gap copper indium aluminum gallium selenide (CIAGS) thin films for tandem solar cells

Content Provider	IEEE Xplore Digital Library
Author	Karthikeyan, S. Sibakoti, M. Liptak, R. Sang Ho Song Abrahamson, J. Aydil, E.S. Campbell, S.A.
Copyright Year	2014
Description	Author affiliation: Dept. of Chem. Eng. & Mater. Sci., Univ. of Minnesota, Minneapolis, MN, USA (Abrahamson, J.; Aydil, E.S.) \|\| Dept. of Electr. & Comput. Eng., Univ. of Minnesota, Minneapolis, MN, USA (Karthikeyan, S.; Sibakoti, M.; Liptak, R.; Sang Ho Song; Campbell, S.A.)
Abstract	Copper indium gallium diselenide (CIGS) based solar cells have shown efficiencies > 20% on the lab scale and are already in commercial production. Even though the optimal band gap of 1.6eV to 1.7eV can be achieved by increasing the Ga content, these solar cells show a maximum efficiency at ~1.3eV and any further increase in the Ga concentration and band gap results in lower efficiencies due to bulk and interfacial traps. This also prevents the use of wide band gap CIGS layer as a top cell for harvesting the solar cell spectrum in a tandem cell configuration. This paper reports the manufacturing challenges on the production of wide band gap aluminum doped CIGS layers (CIAGS) and devices fabricated using this material. We have fabricated 11.3% efficient solar cells using the CIAGS absorber layers.
Starting Page	1632
Ending Page	1634
File Size	993596
Page Count	3
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6925232
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Gallium Photonic band gap Physics Production Spectroscopy Indium wide band gap absorber layer CIAGS solar cells tandem solar cells
Content Type	Text
Resource Type	Article

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