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Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell
| Content Provider | Semantic Scholar |
|---|---|
| Author | Sogabe, Tomah Kaizu, Toshiyuki Okada, Yoshitaka Tomić, Stanko |
| Copyright Year | 2014 |
| Abstract | A GaAs quantum dot (QD) array embedded in a AlGaAs host material was fabricated using a strain-free approach, through combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth. In this work, we performed theoretical simulations on a GaAs/AlGaAs quantum well, GaAs QD and QD array based intermediated band solar cell (IBSC) using a combined multiband k·p and drift-diffusion transportation method. The electronic structure, IB band dispersion, and optical transitions, including absorption and spontaneous emission among the valence band, intermediate band, and conduction band, were calculated. Based on these results, maximum conversion efficiency of GaAs/AlGaAs QD array based IBSC devices were calculated by a drift-diffusion model adapted to IBSC under the radiative recombination limit. |
| Starting Page | 011206 |
| Ending Page | 011206 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.4828359 |
| Volume Number | 6 |
| Alternate Webpage(s) | http://usir.salford.ac.uk/37366/1/JRSE_06_011206.pdf |
| Alternate Webpage(s) | https://core.ac.uk/download/pdf/42589275.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.4828359 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
