NDLI: Effects of doping on carrier confinement in InAs QD solar cells

Content Provider	IEEE Xplore Digital Library
Author	Polly, S.J. Hellstrom, S. Forbes, D.V. Hubbard, S.M.
Copyright Year	2014
Description	Author affiliation: NanoPower Res. Labs., RIT, Rochester, NY, USA (Polly, S.J.; Hellstrom, S.; Forbes, D.V.; Hubbard, S.M.)
Abstract	The confinement depth of bound states in InAs quantum dots was studied as a function of QD doping. k·p simulation predicted a decrease of up to 50 meV in absolute confinement depth as QDs are doped due to local band bending from QD charging. Photoreflectance of solar cells containing QDs doped to several levels was used to determine optical transition energies, necessary to improve the fitting of Gaussian functions against temperature-dependent photoluminescence measurements. Arrhenius analysis was then used to extract activation energies for two QD bound states. Experimental results confirmed the simulated prediction, showing a decrease in activation energy of 40 meV for the QD ground state and 34 meV for the excited state.
Starting Page	1089
Ending Page	1091
File Size	373711
Page Count	3
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6925104
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical variables measurement Energy measurement Photovoltaic cells Temperature measurement Fitting Voltage measurement Integrated optics Activation Energy InAs Quantum Dot Photoreflectance
Content Type	Text
Resource Type	Article

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