NDLI: Silicon solar cell voltage increase based on limited area junction

Content Provider	IEEE Xplore Digital Library
Author	Peinan Teng Xinrui An To, A. Mehrvarz, H. Trupke, T. Barnett, A.
Copyright Year	2014
Description	Author affiliation: Sch. of Photovoltaics & Renewable Energy Eng., Univ. of New South Wales, Sydney, NSW, Australia (Peinan Teng; Xinrui An; To, A.; Mehrvarz, H.; Trupke, T.; Barnett, A.)
Abstract	A study of limited area p-n junction silicon solar cells using photoluminescence (PL) is used to demonstrate the pathways to an increase in open circuit voltage $(V_{OC}).$ A high voltage baseline structure is used to ensure that the junction dominates the recombination. Both quasi-steady-state photo-conductance (QSSPC) and PL measurements indicate higher implied voltage on the limited p-n junction area solar cells compared to full area junction cells. This work aims at achieving more than 740 mV $V_{OC}$ on the limited area junction structure, through optimising the passivation layers and comprehensive analysis of voltage losses throughout the structure. Various choices of passivation layers and a new structure design for separating and analysing $J_{0}$ from each component on the limited area junction solar cell will be presented in this paper.
Starting Page	3021
Ending Page	3024
File Size	781186
Page Count	4
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6925570
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indexes Silicon Passivation silicon limited area junction voltage photoluminescence characterisation photovoltaic solar cell
Content Type	Text
Resource Type	Article

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