NDLI: Numerical analysis of injection level dependent effective lifetime on 125 mm undiffused lifetime samples

Content Provider	IEEE Xplore Digital Library
Author	Fa-Jun Ma Hameiri, Z. Samudra, G.S. Peters, M. Hoex, B.
Copyright Year	2014
Description	Author affiliation: Solar Energy Res. Inst. of Singapore, Nat. Univ. of Singapore, Singapore, Singapore (Fa-Jun Ma; Hameiri, Z.; Samudra, G.S.; Peters, M.; Hoex, B.)
Abstract	Effective minority carrier lifetime reduction at low injection levels is observed on 125 mm undiffused lifetime samples whose surfaces are under inversion due to field-effect passivation. With numerical analysis, we show that edge recombination is insufficient to account for this phenomenon on these samples. Between surface damage and asymmetric bulk lifetimes mechanisms that can account for the reduction, surface damage is confirmed to be more plausible. We demonstrate that the measured effective lifetime curves can be well reproduced assuming surface damage, a 700 nm thin layer with much lower bulk lifetimes, with numerical simulation.
Starting Page	3313
Ending Page	3316
File Size	268462
Page Count	4
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6925643
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Substrates Radiative recombination Silicon Physics Charge carrier processes Semiconductor device modeling photovoltaic cells effective lifetime reduction surface passivation inversion silicon
Content Type	Text
Resource Type	Article

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