NDLI: Potential and present status of III

Content Provider	IEEE Xplore Digital Library
Author	Yamaguchi, M.
Copyright Year	2014
Description	Author affiliation: Toyota Technol. Inst., Nagoya, Japan (Yamaguchi, M.)
Abstract	III-V compound and Si tandem solar cells are expected to have great potential of space and terrestrial application because of high efficiency, light weight and low cost potential. However, problems to be solved are high density of dislocations and large residual strain in III-V compound on Si in the case of hetero epitaxy of III-V compound materials on Si substrates. There are other approaches such as epitaxial lift-off and direct bonding technologies in order to prevent such problems. This paper presents efficiency potential of III-V/Si tandem solar cells and effects of dislocation upon solar cell properties of III-V-on-Si single-junction solar cells and III-V/Si tandem solar cells. The paper also reviews approaches on reduction in dislocation density in III-V compound films on Si and improvements in efficiencies of III-V compound single-junction solar cells on Si substrates and III-V/Si tandem solar cells. We have demonstrated 20% efficiency (under 1-sun of AM1.5G) with hetero-epitaxially grown GaAs single-junction solar cells on Si and Ohio State University has also demonstrated 17.1% (AM0) efficiency with GaAs single-junction solar cells by using Ge buffer layer. Nagoya Inst. Tech. has achieved 22.1% with GaAs/Si tandem solar cell by hetero epitaxy. Most recently, Fraunhofer ISE has demonstrated 27.9 % efficiency (under 48.3-suns of AM1.5D) InGaP/GaAs/Si 3-junction solar cells by using epitaxial lift-off and direct bonding. Future prospects are also discussed.
Starting Page	0821
Ending Page	0826
File Size	1308691
Page Count	6
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6925041
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Gallium arsenide Epitaxial growth Stress Photonic band gap Lighting solar cell properties III–V/Si tandem solar cells hetero-epitaxy of III–V compounds on Si dislocation behavior minority carrier lifetime
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Indium zinc oxide mediated wafer bonding for III–V/Si tandem solar cells

Evolution of the silicon bottom cell photovoltaic behavior during III–V on Si multi-junction solar cells production

a-Si/c-Si/c-Si heterojunction solar cells

SiGe hetero FETs on silicon at cryogenic temperature

Metamorphic tunnel junctions for high efficiency III-V/IV multi-junction solar cell technology

Ideal GaP/Si heterostructures grown by MOCVD: III-V/active-Si subcells, multijuntions, and MBE-to-MOCVD III-V/Si interface science

Exploring new convergences between PV technologies for high efficiency tandem solar cells : Wide band gap epitaxial CIGS top cells on silicon bottom cells with III-V intermediate layers

Integration of III-V materials on silicon substrates for multi-junction solar cell applications

Suns-Voc and Minority Carrier Lifetime Measurements of III-V Tandem Solar Cells

Potential and present status of III–V/Si tandem solar cells

Similar Documents

Indium zinc oxide mediated wafer bonding for III–V/Si tandem solar cells

Evolution of the silicon bottom cell photovoltaic behavior during III–V on Si multi-junction solar cells production

a-Si/c-Si/c-Si heterojunction solar cells

SiGe hetero FETs on silicon at cryogenic temperature

Metamorphic tunnel junctions for high efficiency III-V/IV multi-junction solar cell technology

Ideal GaP/Si heterostructures grown by MOCVD: III-V/active-Si subcells, multijuntions, and MBE-to-MOCVD III-V/Si interface science

Exploring new convergences between PV technologies for high efficiency tandem solar cells : Wide band gap epitaxial CIGS top cells on silicon bottom cells with III-V intermediate layers

Integration of III-V materials on silicon substrates for multi-junction solar cell applications

Suns-Voc and Minority Carrier Lifetime Measurements of III-V Tandem Solar Cells

Potential and present status of III–V/Si tandem solar cells