NDLI: Transition metal nitride contacts for CdTe photovoltaics

Content Provider	IEEE Xplore Digital Library
Author	Zhengfeng Yang Koirala, P. Collins, R.W. Aryal, K. Marsillac, S. Rockett, A.
Copyright Year	2014
Description	Author affiliation: Dept. of Phys. & Astron., Univ. of Toledo, Toledo, OH, USA (Koirala, P.; Collins, R.W.) \|\| Univ. of Illinois Urbana-Champaign, Urbana, IL, USA (Zhengfeng Yang; Rockett, A.) \|\| Virginia Inst. of Photovoltaics, Old Dominion Univ., Norfolk, VA, USA (Aryal, K.; Marsillac, S.)
Abstract	CdS/CdTe thin film photovoltaics were produced with transition metal nitrides (TMNs) as back contacts. The devices show photovoltaic activity but a significant Schottky barrier was found at the back contact. Solar cells perform better as the ZrN films are thicker due to improved microstructure. The good reflectance of ZrN makes it acts as a reflective layer to reduce optical losses and lower the thickness of CdTe. Pure $N_{2}$ plasma treatment of the back surface of the CdTe and annealing did not improve the performance. A thin layer of Cu was introduced to dope the CdTe and completed with a ZrN film but more amount of Cu deteriorates the performance. Although the nitrides are highly stable and have good electrical properties, we have not been able to obtain devices to date that are not limited by the back contacts.
Starting Page	1735
Ending Page	1739
File Size	1097000
Page Count	5
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6925256
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Reflectivity Photovoltaic systems Materials Magnetic multilayers Educational institutions transition metal nitrides Annealing CdTe photovoltaics Cu doping plasma treatment Schottky barrier
Content Type	Text
Resource Type	Article

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