NDLI: >1.8 millisecond effective lifetime in n-type silicon grown by the noncontact crucible method

Content Provider	IEEE Xplore Digital Library
Author	Kivambe, M. Powell, D.M. Ann Jensen, M. Morishige, A.E. Nakajima, K. Murai, R. Morishita, K. Buonassisi, T.
Copyright Year	2014
Description	Author affiliation: Massachusetts Inst. of Technol., Cambridge, MA, USA (Kivambe, M.; Powell, D.M.; Ann Jensen, M.; Morishige, A.E.; Buonassisi, T.) \|\| Grad. Sch. of Energy Sci., Kyoto Univ., Kyoto, Japan (Nakajima, K.; Murai, R.; Morishita, K.)
Abstract	We evaluate the performance and gettering response of n-type ingot silicon material grown by the noncontact crucible method for photovoltaic applications. As-grown lifetimes are >150 μs and relatively homogeneous through the ingot. We apply standard and extended gettering profiles to elucidate gettering response. Effective minority carrier lifetimes are greater than 700 μs and 1.8 ms at an injection condition of $10^{15}$ $cm^{-3}$ after standard and extended gettering schemes, respectively, on samples from near the top of an ingot. Unlike the as-grown state, the wafer lifetime distribution in gettered samples is not homogeneous. In wafers from lower parts of the ingot, concentric-swirl patterns of lower lifetime are revealed after gettering. We hypothesize that gettering removes a large percentage of fast-diffusing impurities, while defect striations similar to swirl microdefects found in Czochralski silicon can in some cases continue to limit lifetimes after gettering. These results indicate that, by application of a tailored gettering process, silicon materials grown by the noncontact crucible method can achieve lifetimes that can readily support high-efficiency solar cells, while highlighting areas for further material improvement.
Starting Page	2988
Ending Page	2990
File Size	611605
Page Count	3
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6925560
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gettering Silicon Standards Impurities Crystals Photovoltaic cells defect engineering noncontact crucible method gettering passivation lifetime silicon impurities
Content Type	Text
Resource Type	Article

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