NDLI: Light trapping in large-scale photonic nanostructures fabricated from vertically aligned Ge quantum dots on crystalline silicon

Content Provider	IEEE Xplore Digital Library
Author	Tayagaki, T. Hoshi, Y. Kishimoto, Y. Usami, N.
Copyright Year	2014
Description	Author affiliation: Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan (Hoshi, Y.; Usami, N.) \|\| Inst. for Chem. Res., Kyoto Univ., Uji, Japan (Tayagaki, T.; Kishimoto, Y.)
Abstract	To realize enhanced optical absorption in near-infrared region in crystalline Si (c-Si) solar cells, we investigated the light trapping in photonic nanostructures fabricated on c-Si substrate by using a wet etching technique with vertically aligned Ge quantum dots (QDs). From photoluminescence excitation measurements, we found that photocarrier generation is enhanced by more than two times in the sample with photonic nanostructures with respect to the reference sample without photonic nanostructures. The enhancement is explained well by light trapping owing to the photonic nanostructures at the incident surface. The enhanced optical absorption in the near-infrared region would be benefit to thinner c-Si solar cells, which fits to a promising direction of c-Si solar cell development.
Starting Page	1257
Ending Page	1259
File Size	181687
Page Count	3
File Format	PDF
e-ISBN	9781479943982
DOI	10.1109/PVSC.2014.6925143
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photonics Nanostructures Silicon Photovoltaic cells Absorption Optical reflection Optical surface waves silicon nanostructures light trapping silicon solar cells
Content Type	Text
Resource Type	Article

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