NDLI: Fine pitch probing and wirebonding and reliability of aluminum capped copper bond pads

Content Provider	IEEE Xplore Digital Library
Author	Tran, T.A. Yong, L. Williams, B. Chen, S. Chen, A.
Copyright Year	2000
Description	Author affiliation: Semicond. Products Sector, Motorola Inc., Austin, TX, USA (Tran, T.A.)
Abstract	The requirement for improved electrical performance and reduced silicon area has driven Copper to replace Aluminum interconnection as silicon technology is scaled beyond 0.25 /spl mu/m. The front-end change, in turn, pushes wirebond pad pitch from above 100 /spl mu/m to 80 /spl mu/m-66 /spl mu/m range. This creates challenges for back-end to probe and wire bond at fine pitch geometry onto a readily oxidized Copper surface. After several re-metallization structures and types of metallurgy were evaluated, capping Copper bond pads with Aluminum was selected as the primary approach for probing and wirebonding Copper devices. Aluminum re-metallization structure offers many advantages that help leverage existing tooling and knowledge in fab, probing and wire bonding processes. This paper will describe probe and wirebond experiments used to select the proper adhesion and diffusion barrier between Copper and Aluminum, and Aluminum thickness that can withstand the mechanical stress during probing and wire bonding. Probe mark depth and the impact of probe marks to the underlying barrier and Copper pad were examined. Ball shear, wire rip and corresponding failure modes, intermetallic coverage and cratering analysis were evaluated at various readpoints of thermal aging study to evaluate the integrity of the re-metallization structure as well as the quality of ball bonds onto the new structure. Contact resistance measurement and reliability assessment were also performed. One re-metallization structure was recommended for Copper High Performance wire bonded devices.
Starting Page	1674
Ending Page	1680
File Size	699234
Page Count	7
File Format	PDF
ISBN	0780359089
DOI	10.1109/ECTC.2000.853444
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum Copper Wire Probes Silicon Geometry Bonding processes Adhesives Stress Diffusion bonding
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Probing and wire bonding of aluminum capped copper pads

Reliability of multi-layer aluminum capped copper interconnect structures

Wire pull on fine pitch pads: an obsolete test for first bond integrity

Manufacturability and reliability of fine pitch wirebonding

Aluminum-capped copper bond pads for ultrasonic heavy copper wire-bonding on power devices

Metal lift failure modes during fine pitch wire bonding low-k devices with Bond Over Active (BOA) design

Fine pitch copper wire bonding process optimization with 33µm size ball bond

Wafer Probing Simulation for Copper Bond Pad Based BPOA Structure

Overview of Metal Lifted Failure Modes During Fine-Pitch Wirebonding Low K/Copper Dies with Bond Over Active (BOA) Circuitry Design

Fine pitch probing and wirebonding and reliability of aluminum capped copper bond pads

Similar Documents

Probing and wire bonding of aluminum capped copper pads

Reliability of multi-layer aluminum capped copper interconnect structures

Wire pull on fine pitch pads: an obsolete test for first bond integrity

Manufacturability and reliability of fine pitch wirebonding

Aluminum-capped copper bond pads for ultrasonic heavy copper wire-bonding on power devices

Metal lift failure modes during fine pitch wire bonding low-k devices with Bond Over Active (BOA) design

Fine pitch copper wire bonding process optimization with 33µm size ball bond

Wafer Probing Simulation for Copper Bond Pad Based BPOA Structure

Overview of Metal Lifted Failure Modes During Fine-Pitch Wirebonding Low K/Copper Dies with Bond Over Active (BOA) Circuitry Design

Fine pitch probing and wirebonding and reliability of aluminum capped copper bond pads