NDLI: Electromigration in sputtered copper interconnection with polyimide as interlevel dielectric or passivation

Content Provider	IEEE Xplore Digital Library
Author	Bi-Shiou Chiou Jiann-Shan Jiang Hsueh-Wen Wang Han-Yi Hung
Copyright Year	2000
Description	Author affiliation: Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan (Bi-Shiou Chiou)
Abstract	Electromigration damage (EMD) is one of the major causes for the failures of interconnection. The use of copper and low dielectric constant dielectric has been proposed to reduce the RC time delay and to improve EMD. In this study, the Electromigration of Cu with polyimide is investigated with an empirical formula dR/dt/spl middot/1/R/sub 0/=AJ/sup n/ exp(Q/RT). Secondary ion mass spectrometry (SIMS) reveals the interdiffusion between Cu and polyimide during curing of the polyimide and/or annealing of Cu metallization. Thin layers of TiW is deposited between polyimide and Cu as a barrier to reduce the interdiffusion. The activation energy Q for the electromigration of Cu on polyimide is 0.77 eV from 120/spl deg/C to 230/spl deg/C, while activation energies for samples with titanium tungsten as an interlayer are 0.79 eV (140/spl deg/C to 190/spl deg/C) and 1.73 eV (190/spl deg/C to 230/spl deg/C). The presence of TiW barrier enhances the high temperature electromigration resistance and promotes the adhesion between Cu and polyimide interface. However, films with TiW are found to be more sensitive to current stressing than those without. Polyimide is also employed as a passivated layer on top of Cu metallization. Resistance of the passivated samples decrease in the initial stage of the electromigration experiment. Possible causes are discussed on the decrease in R. The geometry of the metallization also affects the electromigration, the current exponent (n), calculated from EMD data, are different for interconnection with different geometries.
Starting Page	1686
Ending Page	1689
File Size	377119
Page Count	4
File Format	PDF
ISBN	0780359089
DOI	10.1109/ECTC.2000.853446
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electromigration Copper Polyimides Metallization Dielectric constant Geometry Delay effects Mass spectroscopy Curing Annealing
Content Type	Text
Resource Type	Article

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