NDLI: Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors

Content Provider	IEEE Xplore Digital Library
Author	Cheng Li Qinqing Yang Haiyan Ou Qiming Wang
Copyright Year	2000
Description	Author affiliation: Inst. of Semicond., Acad. Sinica, Beijing, China (Cheng Li)
Abstract	A novel silicon-on-reflector substrate for Si-based resonant-cavity-enhanced photodetectors has been fabricated by using Si-based sol-gel and smart-cut techniques. The Si/SiO/sub 2/ Bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. The reflectance spectra of the silicon-on-reflector substrate with five pairs of Si/SiO/sub 2/ reflector have been measured and simulated by transfer matrix model. The reflectivity at operating wavelength is close to 100%. Based on the silicon-on-reflector substrate, SiGe/Si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 /spl mu/m wavelength have been designed and simulated. Ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted.
Starting Page	1486
Ending Page	1488
File Size	312468
Page Count	3
File Format	PDF
ISBN	0780359089
DOI	10.1109/ECTC.2000.853409
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Resonance Photodetectors Substrates Reflectivity Silicon germanium Germanium silicon alloys Costs Epitaxial growth Hydrogen
Content Type	Text
Resource Type	Article

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