NDLI: Hetero-epitaxial growth of YBCO thin films on the a-cut plane sapphire substrates

Content Provider	IEEE Xplore Digital Library
Author	Ohshima, S. Shirakawa, M. Nishimura, T. Saito, A. Mukaida, M.
Copyright Year	2002
Abstract	We examined the hetero-epitaxial growth of YBCO thin films on the a-cut plane sapphire substrates for the passive microwave applications, because the a-cut plane sapphire substrates have smaller in-plane anisotropy of the dielectric constant compared with that of r-cut plane sapphire substrates. The CeO/sub 2/ buffer layers and YBCO thin films were prepared by an inductive-coupled plasma sputtering method. We found that perfect in-plane alignment of the CeO/sub 2/ buffer layer could be obtained on the a-cut plane sapphire substrates. Also we could obtain the hetero-epitaxial YBCO thin films on CeO/sub 2//a-cut plane sapphire substrates. Tc of the YBCO thin films was approximately 89 K, and the surface resistance (Rs) of the YBCO thin films was approximately 1 m/spl Omega/ at 50 K and at 22 GHz, equivalently to values for YBCO thin films fabricated on the r-cut plane sapphire substrates.
Sponsorship	Council on Superconductivity Appl. Superconductivity Conference Inc MIT
Starting Page	2985
Ending Page	2988
Page Count	4
File Size	173694
File Format	PDF
ISSN	10518223
Volume Number	15
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Yttrium barium copper oxide Transistors Dielectric substrates Dielectric thin films Sputtering Buffer layers Surface resistance Anisotropic magnetoresistance Dielectric constant Plasma applications YBCO Buffer layer hetero-epitaxy surface resistance Tc
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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