NDLI: Characterization of 4 K CMOS devices and circuits for hybrid Josephson-CMOS systems

Content Provider	IEEE Xplore Digital Library
Author	Yoshikawa, N. Tomida, T. Tokuda, M. Liu, Q. Meng, X. Whiteley, S.R. Van Duzer, T.
Copyright Year	2002
Abstract	Characterization and modeling of CMOS devices at 4.2 K are carried out in order to simulate low-temperature operation of CMOS circuits for Josephson-CMOS hybrid systems. CMOS devices examined in this study have been fabricated by using 0.18 /spl mu/m, 0.25 /spl mu/m, and 0.35 /spl mu/m commercial CMOS processes. Their static I-V characteristics and capacitances are measured at 4.2 K to establish the low-temperature device model based on the BSIM3 SPICE model. The propagation delays of CMOS inverters measured by using ring oscillators agree well with the simulation results. The experimental results indicate about 40% speedup from 300 K to 4.2 K. A three-transistor DRAM cell for a Josephson-CMOS hybrid memory is also investigated at low temperature. The temperature dependence of the retention time shows an exponential increase at low temperatures. Based on the low-temperature CMOS device model, we have developed short-delay CMOS amplifiers, which would amplify a 40 mV voltage input to CMOS voltage level with the propagation delay of about 100 ps, assuming the use of a 0.18 /spl mu/m CMOS process. We have measured the propagation delay of the CMOS amplifier by using a single-flux-quantum (SFQ) delay measurement system. This is a complete demonstration of the signal exchanges between SFQ and CMOS circuits at 4.2 K.
Sponsorship	Council on Superconductivity Appl. Superconductivity Conference Inc MIT
Starting Page	267
Ending Page	271
Page Count	5
File Size	201391
File Format	PDF
ISSN	10518223
Volume Number	15
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS process Semiconductor device modeling Propagation delay Temperature dependence Voltage Circuit simulation Capacitance-voltage characteristics Capacitance measurement SPICE Inverters superconducting circuits CMOS circuits device model differential amplifier hybrid system MOSFET SFQ circuits
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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