NDLI: Six-layer process for the fabrication of Nb/Al-AlO/sub x//Nb Josephson junction devices

Content Provider	IEEE Xplore Digital Library
Author	Cantor, R. Hall, J.
Copyright Year	2002
Abstract	A six-layer process is described for the fabrication of Josephson junction devices and Superconducting QUantum Interference Devices (SQUIDs) on silicon wafers up to 150 mm in diameter. The Nb/Al-AlO/sub x//Nb trilayers are sputter-deposited in a load-locked vacuum chamber with base pressure in the low 10/sup -7/ Pa (10/sup -9/ Torr) range and a very low leak up rate of 5/spl times/10/sup -6/ Pa/min (3.5/spl times/10/sup -5/ mTorr/min). The barrier process is optimized for a critical current density of 100 A/cm/sup 2/, and all resistors are fabricated from palladium with a sheet resistivity of 1 /spl Omega//sq. A charge dissipative dielectric layer is used in order to reduce the probability of damage caused by electrostatic charge build-up and discharge. The trilayer films are wet etched, while the subsequent metal and dielectric films are patterned using fluorine-based reactive ion etch, Ar ion milling, or lift-off techniques. This process is currently being used to fabricate dc SQUIDs for various instrumentation applications, integrated SQUID magnetometers and planar gradiometers, and single tunnel junction detectors.
Sponsorship	Council on Superconductivity Appl. Superconductivity Conference Inc MIT
Starting Page	82
Ending Page	85
Page Count	4
File Size	1253905
File Format	PDF
ISSN	10518223
Volume Number	15
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Niobium SQUIDs Josephson junctions Wet etching Superconducting devices Interference Silicon Critical current density Resistors Josephson device fabrication
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Noise in DC SQUIDS with Nb/Al-oxide/Nb Josephson junctions

Micron and submicron Nb/Al-AlO/sub x//Nb tunnel junctions with high critical current densities

Self-shunted Nb/AlO/sub x//Nb Josephson junctions

Sub-gap leakage in Nb/AlO/sub x//Nb and Al/AlO/sub x//Al Josephson junctions

Fabrication of submicron Nb/AlO/sub x/-Al/Nb tunnel junctions using focused ion beam implanted Nb patterning (FINP) technique

300-GHz Operation of Divider Circuits Using High- $J_{c} hbox{Nb/Nb}_{x}hbox{Si}_{1-x}/hbox{Nb} $ Josephson Junctions

Process-Induced Variability of ${rm Nb/Al}/{rm AlO}_{rm x}/{rm Nb}$ Junctions in Superconductor Integrated Circuits and Protection Against It

High quality Nb-AlO/sub x/-Nb junctions for microwave receivers and SFQ logic device

An improved etching process used for the fabrication of submicron Nb/AlO/sub x//Nb Josephson junctions

Six-layer process for the fabrication of Nb/Al-AlO/sub x//Nb Josephson junction devices

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Sub-gap leakage in Nb/AlO/sub x//Nb and Al/AlO/sub x//Al Josephson junctions

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