NDLI: NO sensitivity of wide area SiC and epitaxial graphene on SiC substrates

Content Provider	IEEE Xplore Digital Library
Author	Qazi, M. Nomani, M.W. Chandrashekhar, M.V.S. Koley, G.
Copyright Year	2009
Description	Author affiliation: Department of Electrical Engineering, University of South Carolina, Columbia, SC29208, USA (Qazi, M.; Nomani, M.W.; Chandrashekhar, M.V.S.; Koley, G.)
Abstract	SiC has cemented its place as a material of choice for high power devices that can operate at high temperature and harsh environment due to its high critical breakdown field (> 2 MV/cm), high thermal conductivity (120 W/m-K), and high electron saturation velocity. Therefore, SiC is one of the commonly materials used in high temperature gas sensors in catalytic converter today. Most SiC gas sensors are in the form of schottky diodes or capacitive MIS devices [1] where target molecules would dissociate on the catalyst metal surface and create a change in potential barrier across the interface. Despite its widespread application in high temperature gas sensors, SiC is still used as substrate material as gaseous adsorption on thin film semiconductor surfaces does not change the conductance of the overall film significantly. Consequently, research reports on molecular adsorption on SiC thin films and related electronic property changes are scarce. Nevertheless, theoretical calculations involving SiC nanotubes show that they can bind gaseous molecules [2] and also reports on experimental evidences of H detection utilizing resistance change of 3C-SiC thin films [3] are present. In this work, microcantilever based electrostatic force microscopy is applied to find out the surface work function (SWF) changes of wide area SiC thin films with the adsorption of NO molecules. Any sensitivity variation between Si and C faces of SiC and also between undoped and doped SiC is also discussed.
Starting Page	1
Ending Page	2
File Size	237392
Page Count	2
File Format	PDF
ISBN	9781424460304
DOI	10.1109/ISDRS.2009.5378345
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-12-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon carbide Gas detectors Substrates Conducting materials Temperature sensors Electrons Electrostatics Educational institutions Thermal conductivity Semiconductor thin films
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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