NDLI: Zero-bias Si backward diodes detectors incorporating P and B δ-doping layers grown by chemical vapor deposition

Content Provider	IEEE Xplore Digital Library
Author	Si-Young Park Anisha, R. Sheng Jiang Berger, P.R. Loo, R. Ngoc Duy Nguyen Takeuchi, S. Goossens, J. Caymax, M.
Copyright Year	2009
Description	Author affiliation: IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium (Loo, R.; Ngoc Duy Nguyen; Takeuchi, S.; Goossens, J.; Caymax, M.) \|\| Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH 43210 USA (Si-Young Park; Anisha, R.; Berger, P.R.) \|\| Department of Physics, Ohio State University, Columbus, OH 43210 USA (Sheng Jiang)
Abstract	Backwards diodes are well suited for the passive detection of millimeter-wave radiation [1], as they operate at zero-bias, which reduces 1/f noise, thereby enabling simple operation and compact focal plane pixels with no extra bias control circuitry required. However, most backward-diode detectors utilize III–V compound based heterojuctions [2], which are not readily compatible with mainstream silicon technology of complementary metal oxide semiconductor (CMOS) and heterojunction bipolar transistor (HBT) and require pick-and-place assembly. Recently, the first directly-measured microwave sensitivity performance of a zero-bias Si-based backward diodes, grown by low-temperature molecular beam epitaxial (LT-MBE) growth, were demonstrated [3]. Today, however, the most common epitaxial processes for manufacturing and industry are based on chemical vapor deposition (CVD) which can produce high quality single-crystalline epitaxial devices over large wafers and with batch processing. In this paper, we report the first CVD grown silicon only backward diodes incorporating δ-doping layers with zero external dc bias.
Starting Page	1
Ending Page	2
File Size	210826
Page Count	2
File Format	PDF
ISBN	9781424460304
DOI	10.1109/ISDRS.2009.5378255
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-12-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Envelope detectors Chemical vapor deposition Silicon Semiconductor diodes Heterojunction bipolar transistors Microwave devices Temperature sensors Educational institutions Millimeter wave technology Tunneling
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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