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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tung-Ming Pan Fa-Hsyang Chen Cheng-Da Lee Yu-Kai Chien Ho-Ming Ko |
| Copyright Year | 2009 |
| Description | Author affiliation: Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan, R. O. C. (Tung-Ming Pan; Fa-Hsyang Chen; Cheng-Da Lee; Yu-Kai Chien; Ho-Ming Ko) |
| Abstract | The ion-sensitive field-effect-transistor (ISFET) was invented by Bergveld in 1970 to measure pH and a variety of other ions [1]. Several dielectric films, such as SiO, Si, Al, SnO, and Ta [2], have been used as pH sensors. Si film is the most popular sensing material because of high compatibility for CMOS integration [3]. However, this film exhibits degradation of pH sensing characteristics due to oxidation of the Si surface, resulting in a lower pH sensitivity. High-k dielectric materials, including HfO, Y, and Gd [4–6], can be considered as a sensing membrane for pH-ISFET application. Rare-earth oxides have been investigated for semiconductor applications because of high dielectric constants, high resistivities, and large energy bandgap [7]. A ytterbium oxide (Yb) film is attractive as a sensing film in the pH-ISFET devices due to its dielectric constant of ~15, energy band gap of >5 eV, and predicted chemical and thermal stability with Si [8]. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 220751 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781424460304 |
| DOI | 10.1109/ISDRS.2009.5378146 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-12-09 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | High K dielectric materials High-K gate dielectrics Sputtering Semiconductor thin films Annealing Hysteresis Voltage Silicon compounds Rough surfaces Surface roughness |
| Content Type | Text |
| Resource Type | Article |
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