NDLI: Quantum transport in patterned graphene nanoribbons

Content Provider	IEEE Xplore Digital Library
Author	Chuanxin Lian Tahy, K. Tian Fang Guowang Li Xing, H.G. Jena, D.
Copyright Year	2009
Description	Author affiliation: Electrical Engineering Department, University of Notre Dame, USA (Chuanxin Lian; Tahy, K.; Tian Fang; Guowang Li; Xing, H.G.; Jena, D.)
Abstract	Graphene, a single sheet of graphite, has aroused intense interest since its isolation in 2004. Two-dimensional (2D) graphene sheets are nearly metallic, while ultrathin graphene nanoribbons (GNRs) show semiconducting properties with the energy bandgap scaling inversely with the ribbon width. Although sub-10-nm GNRs have been achieved by chemical approaches [1, 2], the ability to form GNRs lithographically will facilitate the compatibility with the conventional planar integrated circuit (IC) manufacturing. Hydrogen silsesquioxane (HSQ) is widely utilized as etching masks to fabricate GNRs due to its high resolution in e-beam lithography (EBL). HSQ can be removed by buffered hydrofluoric (BHF) acid after the GNR formation. However, the normally used SiO substrate supporting the exfoliated graphene can be etched by BHF as well. In this work we present the fabrication of GNRs using Al metal mask in the O plasma etching. GNRs as thin as ~ 20 nm have been achieved. The conductance modulation by the back gate is in the order of $10^{6}$ at 4.2 K. Besides, quantized conductance was observed in the thin GNRs which form quasi-1D transport systems due to the carrier constriction by the ribbon edge boundaries. Landauer's formula was applied to fit the experimental data and excellent agreement was achieved.
Starting Page	1
Ending Page	2
File Size	380673
Page Count	2
File Format	PDF
ISBN	9781424460304
DOI	10.1109/ISDRS.2009.5378286
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-12-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electron beams Etching Fabrication Lithography Plasma applications Plasma transport processes
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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