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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Azevedo, R.G. Myers, D.R. Pisano, A.P. |
| Copyright Year | 2009 |
| Description | Author affiliation: Department of Mechanical Engineering, University of California, Berkeley, USA (Azevedo, R.G.; Myers, D.R.; Pisano, A.P.) |
| Abstract | This work presents thin-film polycrystalline silicon carbide resonant micro-extensometers fabricated on a single-crystalline silicon substrate that are temperature-insensitive near room temperature. The slight difference in thermal expansion coefficient between the device layer and the substrate induces a slight tensile strain near room temperature, which counteracts material softening of the resonator. An analytical model that accounts for these thermal effects predicts that this system will exhibit a turnover temperature near room temperature. A temperature sensitivity of 0.7 Hz/°C (3.6 ppm/°C) from 17 to 65 °C is measured experimentally, without compromising the strain-sensing capability of the resonator. This is nearly a 10-fold improvement over an equivalent epitaxial silicon resonant miro-extensometer (−30 ppm/°C) [1]. |
| Starting Page | 268 |
| Ending Page | 271 |
| File Size | 422827 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424441907 |
| e-ISBN | 9781424441938 |
| DOI | 10.1109/SENSOR.2009.5285513 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-06-21 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon carbide Resonance Temperature sensors Substrates Capacitive sensors Frequency Thermal expansion Semiconductor thin films Softening Analytical models temperature compensation strain gauge gage resonator resonant silicon carbide SiC |
| Content Type | Text |
| Resource Type | Article |
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