NDLI: Self-consistent thermal and electrical analysis of silicon carbide power DMOSFET heating and cooling

Content Provider	IEEE Xplore Digital Library
Author	Akturk, A. Potbhare, S. Goldsman, N. Lelis, A.
Copyright Year	2009
Description	Author affiliation: Army Research Laboratory, Adelphi, MD, USA (Lelis, A.) \|\| Department of Electrical and Computer Engineering, University of Maryland College Park, USA (Akturk, A.; Potbhare, S.; Goldsman, N.)
Abstract	We investigate the chip heating in silicon carbide (SiC) double diffused power MOSFETs at the resolution of DMOSFET cells (typically > 30,000 cells per power chip [1]). To achieve this, we develop unique chip and device simulators for determining the coupled electrical and thermal performance. Specifically, we first start by obtaining the electrical operational details of a typical power chip cell by solving for the coupled semiconductor equations and the Poisson equation. We also resolve the feedback between the electrical and thermal dynamics within this cell by self-consistently coupling the differential heat flow equation to the electrical performance equations. The cell level, described so far, provides the voltage and temperature dependent electrical characteristics as well as the heat generated for a typical power chip cell. We then proceed to the power chip level by first finding the locations of these individual cells. These locations along with the layout details such as fabrication materials (metals, substrate, insulators and package materials) and their dimensions between individual devices or between the devices at the edge and the outside help us calculate the associated thermal resistances between our thermal nodes, which correspond to individual cells. The electrical simulation of the cell is used to calculate space and temperature dependent local heat generated on the chip. These local heat generated figures are then fed to the power integrated circuit (IC) thermal network to solve for a temperature profile. We iterate between the temperature profile calculated at the power chip level and the heat generated at the cell level due to electrical flow until all local cell temperatures and heat generated calculated using the thermal network and the electrical cell simulator, respectively, agree at both levels. The feedback between the IC thermal and device electrical network is conceptually shown in Fig. 1. The heat generated at the resolution of a single cell and the temperature calculated by coupling that cell to the rest of the chip are iterated until a self-consistent heat generated and temperature map for the entire chip is achieved.
Starting Page	1
Ending Page	2
File Size	767394
Page Count	2
File Format	PDF
ISBN	9781424460304
DOI	10.1109/ISDRS.2009.5378139
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-12-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon carbide Cooling
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Thermal analysis of 4H-SiC DMOSFET structure under resistive switching

Thermal management of silicon carbide power module for military hybrid vehicles

Investigation of the thermal runaway of silicon carbide diodes during blocking operation

Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range

6-in-1 Silicon carbide power module for high performance of power electronics systems

Realization and thermal analysis of silicon thermal spreaders used in power electronics cooling

Integrated micro-channel cooling in silicon

A silicon-carbide micro-capillary pumped loop for cooling high power devices

Analysis of RF performances of GaN MESFETs including self-heating and trapping effects

Self-consistent thermal and electrical analysis of silicon carbide power DMOSFET heating and cooling

Similar Documents

Thermal analysis of 4H-SiC DMOSFET structure under resistive switching

Thermal management of silicon carbide power module for military hybrid vehicles

Investigation of the thermal runaway of silicon carbide diodes during blocking operation

Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range

6-in-1 Silicon carbide power module for high performance of power electronics systems

Realization and thermal analysis of silicon thermal spreaders used in power electronics cooling

Integrated micro-channel cooling in silicon

A silicon-carbide micro-capillary pumped loop for cooling high power devices

Analysis of RF performances of GaN MESFETs including self-heating and trapping effects

Self-consistent thermal and electrical analysis of silicon carbide power DMOSFET heating and cooling