NDLI: Investigation of breakdown behavior for AlGaN HEMTs

Content Provider	IEEE Xplore Digital Library
Author	Huebschman, B.D. Darwish, A. Goldsman, N. Vivieros, E.A. Hung, A.
Copyright Year	2009
Description	Author affiliation: University of Maryland, Department of Electrical and Computer Engineering (Goldsman, N.) \|\| The Army Research Laboratory, Sensor and Electron Devices Division, USA (Huebschman, B.D.; Darwish, A.; Vivieros, E.A.; Hung, A.)
Abstract	The ability to accurately determine the breakdown voltage of microwave transistors is critical to the design of high power microwave amplifiers. The optimal bias point and output impedance should be selected to ensure that the load line of the device during peak output power does not intersect the portion of the IV curve where the device breaks down [1]. A technique that has proven useful for the measuring off-state breakdown voltage for FETs was reported on by Bahl and del Alamo in 1993 [2]. This procedure works well for a variety of devices including microwave GaAs MESFETs, as described in the original article, and GaAs HEMTs. Fig. 1 shows the circuit diagram for the gate breakdown measurement system. The procedure for the measurement consists of using a current source to force a fixed current through the drain. The voltage on the gate is swept from zero to a negative value, while the voltage on the drain is allowed to float to whatever value is required to force the drain current. Bahl and del Alamo use a rule of thumb for the drain current of 1mA/mm [2]. This has proven to be a useful standard for GaAs MESFETs and HEMTs.
Starting Page	1
Ending Page	2
File Size	164491
Page Count	2
File Format	PDF
ISBN	9781424460304
DOI	10.1109/ISDRS.2009.5378161
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-12-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electric breakdown Aluminum gallium nitride HEMTs MODFETs Microwave devices Microwave amplifiers High power amplifiers Microwave transistors Impedance Power generation
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
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9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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