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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Riyadi, M. Pollard, C. Arora, V.K. |
| Copyright Year | 2009 |
| Description | Author affiliation: Faculty of Electrical Engineering, Universiti Teknologi Malaysia, UTM Skudai, Johor 81310, Malaysia (Riyadi, M.; Arora, V.K.) || Division of Engineering and Physics, Wilkes University, Wilkes-Barre, PA18707, U. S. A. (Pollard, C.) |
| Abstract | The ballistic mobility data by Luskawoski et. al [1] is interpreted by using recently published formalism [2]. The mobility is shown to be ballistic when the ballistic mean free path in a nanoscale transistor exceeds the channel length. This ballistic mobility affects the critical voltage V that can be as low as the thermal voltage 2 V (0.0518 V at room temperature) for a quasi-2-domensional (Q2D) nanostructure at the onset of nonlinearity in current-voltage relationship. The applied voltage V=0.08 V is higher than the thermal voltage triggering decline of mobility at low channel lengths due to high fields present. The general formalism is in excellent agreement with the experimental data. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 160394 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781424460304 |
| DOI | 10.1109/ISDRS.2009.5378299 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-12-09 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Degradation MOSFET circuits Ballistic transport Electrons Physics Voltage Nanoscale devices HEMTs Particle scattering MODFETs |
| Content Type | Text |
| Resource Type | Article |
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