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Content Provider | IEEE Xplore Digital Library |
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Author | Abdel-Motaleb, I.M. Shetty, N. Leedy, K. Cortez, R. |
Copyright Year | 2009 |
Description | Author affiliation: Sensor Directorate, Wright-Patterson Air Force Base, USA (Leedy, K.) || Department of Electrical Engineering, Northern Illinois University, USA (Abdel-Motaleb, I.M.; Shetty, N.) || Department of Mechanical Engineering, Union College, USA (Cortez, R.) |
Abstract | The combinational properties of ZnO of hardness to visible light, transparency, low temperature deposition, high mobility, and the ability to crystallize on almost any substrate enables ZnO Thin Film Transistors (TFTs) to be promising low-cost optoelectronic devices for the next generation of invisible and flexible electronics, such as switches for addressing active matrices based on organic light-emitting diodes. Using high-K dielectrics in ZnO TFTs substantially increases its transconductance, g [1]. Using Barium Strontium Titanate (BST) may result in the increase of g by more than 200 times it value if SiO is used. |
Starting Page | 1 |
Ending Page | 2 |
File Size | 289808 |
Page Count | 2 |
File Format | |
ISBN | 9781424460304 |
DOI | 10.1109/ISDRS.2009.5378327 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2009-12-09 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Zinc oxide Thin film transistors Temperature Crystallization Dielectric substrates Optoelectronic devices Flexible electronics Switches Active matrix addressing Active matrix organic light emitting diodes |
Content Type | Text |
Resource Type | Article |
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