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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Smith, S.W. McAuliffe, K.G. Conley, J.F. |
| Copyright Year | 2009 |
| Description | Author affiliation: School of EECS and Dept. of Materials Science, Oregon State University, USA (Smith, S.W.; McAuliffe, K.G.; Conley, J.F.) |
| Abstract | Nanolaminate dielectric films [1–4] offer the possibility of tailoring the electrical properties of dielectric stacks for specific applications such as the tunnel dielectric for MIM diodes, storage capacitors [5], non-volatile memories[6], and TTFTs [7,8]. Nanolaminates deposited via ALD have been reported to display properties that are not just a weighted average of the component materials but depend upon the laminate structure as well. Kukli, et al. have shown that leakage, permittivity, and charge storage in ZrO and HfO laminates varies with the number of bilayers, due in part to the number of interfaces and spatial confinement induced changes in the crystal structure of HfO and ZrO [2,3]. Kattelus, et al. [1] report that Al laminates of varying composition, deposited using AlCl and TaCl as metal precursors, exhibit dielectric constants and leakage as a function of composition intermediate between the pure films. In this work amorphous Al laminates of a single fixed composition and total thickness with varying numbers of bilayers were synthesized in order to investigate the influence of interfaces on electrical properties, independent of changes in composition and crystal structure. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 231987 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781424460304 |
| DOI | 10.1109/ISDRS.2009.5378151 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-12-09 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Atomic layer deposition Aluminum oxide Laminates Dielectric constant Dielectric thin films Conductive films MIM capacitors Amorphous materials Water Electrons |
| Content Type | Text |
| Resource Type | Article |
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