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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Riyadi, M.A. Arora, V.K. |
| Copyright Year | 2011 |
| Description | Author affiliation: Faculty of Electrical Engineering, Universiti Teknologi Malaysia, UTM Skudai, Johor 81310, Malaysia (Riyadi, M.A.; Arora, V.K.) |
| Abstract | The ballistic transport has been extensively discussed for years in search for enhancement of device and circuit performance. The device performance is expected to improve as channel length is reduced below the scattering-limited mean free path (mfp). However, several experimental observations [1–3] reveal that the mobility degrades when the channel length decreases below the long-channel mean free path. Riyadi and Arora[4, 5] point to the fact that ballistic injection from the contacts play a predominant role in enhancing the ballistic mean free path. Non-stationary transient transport results in reduced mobility as transit time delay is below the collision-limited mean free time. Hence steady state is never realized in ballistic devices. The other factor that degrade the mobility is the presence of high electric field E=V/L that is necessarily high in scaled-down channel of length L. So far the applied voltage V is below the critical voltage for triggering nonlinear behavior, the high-field effects are negligible as in the experiments of Robertson and Dumin [2]. It was revealed that a mobility of 25,000 $cm^{2}/V.s$ in a 500-μm channel reduces to only 800 $cm^{2}/V.s$ in a 0.2-μm channel at 4.2 K. High mobilities are thus more susceptible to degradation. The critical voltage V and V play a predominant role in defining whether or not high-field effects are present. The criteria to unscramble ballistic effects from high-field effects will be presented. Fig. 1 shows the critical voltage in a ballistic as well as long-channel MOSFET. As expected, ballistic effect disappears at longer channel length. Actually high-field effects are suppressed in a ballistic channel. At a low voltage of V=0.1 V, the high-field effects are largely absent at which experimental data is obtained. As applied voltage increases and surpasses the critical voltage, high-field effect further suppresses the mobility. Fig. 2 gives the results of a comparison of theoretical formalism developed with the experimental data. An expression for the ultimate saturation velocity as arising from the intrinsic velocity for a MOSFET is obtained and is critical to interpretation of the experimental data. This intrinsic velocity depends on temperature and carrier concentration. The agreement with the experimental data over a wide range of channel length and ambient temperature gives credence to the theory as well as elucidates new light as new directions are discovered for design and development of low-dimensional devices, including nanowires and carbon-based devices. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 164870 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781457717550 |
| e-ISBN | 9781457717567 |
| DOI | 10.1109/ISDRS.2011.6135315 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-12-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Degradation Educational institutions Physics USA Councils MOSFET circuits Nanoscale devices Ballistic transport |
| Content Type | Text |
| Resource Type | Article |
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