NDLI: A novel submicron fabrication technique

Content Provider	IEEE Xplore Digital Library
Author	Jackson, T.N. Masnari, N.A.
Copyright Year	1979
Description	Author affiliation: The University of Michigan, Ann Arbor, Michigan (Jackson, T.N.)
Abstract	A novel technique for producing submicron linewidths and devices has been developed. The technique does not require electron beam or other exotic lithographic techniques, but instead uses conventional photolithography and a selective edge planing step. In this step, a metal is plated to the edge of a conventionally patterned metal layer. This plated edge is then used as a mask for subsequent plasma etching of underlying conductors or dielectrics. This technique has produced linewidths as small as 0.04 µm and can be applied to the fabrication of a variety of microwave devices. In particular, it has been used to produce GaAs MESFETs with gold-plated chromium gates as short as 0.1 µm. The performance of GaAs MESFETs produced in this manner is comparable to that of devices fabricated using more complex and expensive gate patterning techniques. For example, MESFETs on ion-implanted GaAs with 5 µm source-drain spacings, 0.3 µm gate lengths, and 250 µm gate widths, have exhibited maximum available gains of over 10 dB at a frequency of 12 GHz.
Starting Page	58
Ending Page	61
File Size	293506
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1979.189539
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1979-12-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Gallium arsenide MESFETs Electron beams Lithography Planing Plasma applications Plasma devices Etching Conductors
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
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9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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