NDLI: Process and yield enhancements for epitaxially grown mercuric iodide crystals

Content Provider	IEEE Xplore Digital Library
Author	van den Berg, L. Saleno, M.R. Vigil, R.D. Baker, J.L. Yuefeng Zhu Kaye, W.R. Zhong He Camarda, G.S. James, R.B.
Copyright Year	2010
Description	Author affiliation: Brookhaven National Laboratory, Upton, NY, 11973 USA (Camarda, G.S.; James, R.B.) \|\| Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI, 48109 USA (Yuefeng Zhu; Kaye, W.R.; Zhong He) \|\| Constellation Technology Corporation, Largo, FL 33777 USA (van den Berg, L.; Saleno, M.R.; Vigil, R.D.; Baker, J.L.)
Abstract	Mercuric iodide single crystals have been used successfully as gamma radiation detectors for many years. Recently a different growth method called ‘seeded homoepitaxy’ has been studied. This method has the advantage of growing detector-sized volumes with a thickness of about 10mm in a highly accelerated timeframe. The electronic transport properties of a mercuric iodide detector have been shown to depend primarily upon two factors. The first is material quality, which is predominantly determined by the levels of organic and inorganic impurities and the compound stoichiometry. The second is the integrity of the crystalline structure (type and density of defects), which depends mostly upon the thermal growth profile, conditions inside the growth chamber, and seed preparation. Recent improvements made to the epitaxial process have resulted in a detector performance for both planar and pixelated devices that rivals that of traditional ampoule-grown crystals. This increases the usefulness of devices in field applications. Changes in the seed attachment and preparation methods have been successful at reducing crystalline defects by about 90%. This has been substantiated using a method of measuring and recording defect density that combines laser backscatter with digital photography. Improvements in the mercuric iodide growth process, bulk material impurity reduction, and the laser backscatter digital photography will be described and the results discussed.
Starting Page	3932
Ending Page	3936
File Size	702151
Page Count	5
File Format	PDF
ISBN	9781424491063
ISSN	10957863
e-ISBN	9781424491056
DOI	10.1109/NSSMIC.2010.5874552
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-10-30
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Crystals Detectors Pixel Epitaxial growth Substrates Performance evaluation Semiconductor radiation detectors Gamma-ray spectroscopy detectors Mercuric iodide Radiation detectors Semiconductor epitaxial layers
Content Type	Text
Resource Type	Article

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