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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Lambropoulos, C.P. Aoki, T. Crocco, J. Dieguez, E. Disch, C. Fauler, A. Fiederle, M. Hatzistratis, D. Gnatyuk, V.A. Karafasoulis, K. Kosyachenko, L.A. Levytskyi, S.N. Loukas, D. Maslyanchuk, O.L. Medvids, A. Orphanoudakis, T. Papadakis, I. Papadimitriou, A. Papakonstantinou, K. Potiriadis, C. Schulman, T. Sklyarchuk, V.V. Spartiotis, K. Theodoratos, G. Vlasenko, O.I. Zachariadou, K. Zervakis, E. |
| Copyright Year | 2010 |
| Description | Author affiliation: Technological Educational Institute of Chalkida, Psahna - Evia, 34400 Greece (Lambropoulos, C.P.; Hatzistratis, D.; Orphanoudakis, T.; Papakonstantinou, K.; Theodoratos, G.; Zervakis, E.) || Freiburger Materialforschungszentrum, Albert Ludwigs University, Freiburg, Germany (Disch, C.; Fauler, A.; Fiederle, M.) || Departemento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid, Spain (Crocco, J.; Dieguez, E.) || Chernivtsi Yury Fedkovych National University, Chernivtsi, Ukraine (Kosyachenko, L.A.; Maslyanchuk, O.L.; Sklyarchuk, V.V.) || Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan (Aoki, T.) || Greek Atomic Energy Commission, Agia Paraskevi, Attiki, Greece (Karafasoulis, K.; Potiriadis, C.) || Oy Ajat Ltd, Espoo, Finland (Schulman, T.; Spartiotis, K.) || Institute of Nuclear Physics, National Center for Scientific Research, Agia Paraskevi, Attiki, Greece (Loukas, D.; Papadakis, I.; Papadimitriou, A.; Zachariadou, K.) || Riga Technical University, Riga, Latvia (Medvids, A.) || V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine (Gnatyuk, V.A.; Levytskyi, S.N.; Vlasenko, O.I.) |
| Abstract | The COCAE project develops an instrument for localization and identification of radioactive sources. For the localization task it will exploit the Compton scattered photons within its detecting layers. It is based on pixilated Cd(Zn)Te matrices in a stacked configuration. Progress has been achieved in all the components necessary for this technology. CdZnTe crystals have been grown of up to 75mm in diameter. A wafer level pixelization process has been tested and its results will be presented. Very good energy resolution is necessary for the performance of the instrument. For this reason we have investigated planar M-p-n diodes fabricated by using laser-induced solid phase doping and Schottky diodes created by Arion etching of the Cd(Zn)Te surfaces before deposition of Ni electrodes. The energy resolution achieved is better than 1% FWHM @662KeV. The development of a pixel CMOS readout integrated circuit has been undertaken. It outputs in digital format address, energy and time information for the pixels which have collected charge above a given threshold. Simulation studies of the minimum detection limits, of the Compton sequencing algorithms, of the angular resolution and of the reconstruction of the radioactive source position have been performed. Experiments with a precursor setup using an existing hybrid detector are underway. |
| Starting Page | 3910 |
| Ending Page | 3917 |
| File Size | 1061156 |
| Page Count | 8 |
| File Format | |
| ISBN | 9781424491063 |
| ISSN | 10957863 |
| e-ISBN | 9781424491056 |
| DOI | 10.1109/NSSMIC.2010.5874548 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-10-30 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Detectors Crystals Energy resolution Pixel Schottky diodes Electronic mail Instruments |
| Content Type | Text |
| Resource Type | Article |
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