NDLI: A review of SIMS techniques for characterization of ultra low energy ion implants

Content Provider	IEEE Xplore Digital Library
Author	Smith, S.P. Chia, V.K.F. Hitzman, C.J. Mount, G.
Copyright Year	1996
Description	Author affiliation: Charles Evans & Associates, Redwood City, CA, USA (Smith, S.P.)
Abstract	SIMS (secondary ion mass spectrometry) is the most commonly used analytical technique for characterizing low energy ion implants. To obtain accurate near-surface SIMS profiles, instrumental depth resolution must be optimized, and transient ion yield changes during primary ion beam equilibration must be minimized. Best depth resolution is obtained by sputtering with a low energy primary ion beam incident on the sample at a large angle with respect to the surface normal. These analytical conditions also reduce the depth range over which transient ion yield changes occur. For oxygen primary ion bombardment, flooding the sample surface with oxygen gas during analysis can largely eliminate transient ion yield changes. Of the readily available SIMS instrument configurations, Quadrupole SIMS can deliver the best depth resolution. However, the low mass resolving power of Quadrupole SIMS results in important limitations due to its inability to resolve mass interferences from surface contamination. Magnetic Sector SIMS can eliminate the interference problem by operating in a high mass resolution mode. SurfaceSIMS, using oxygen flooding, provides high sensitivity and uniform near-surface ion yields required for accurate and reproducible depth profiling of shallow ion implants and surface contaminants related to ion implantation.
Starting Page	599
Ending Page	602
File Size	381077
Page Count	4
File Format	PDF
ISBN	078033289X
DOI	10.1109/IIT.1996.586470
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-06-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Surface contamination Implants Instruments Energy resolution Ion beams Transient analysis Floods Mass spectroscopy Sputtering Magnetic analysis
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
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