NDLI: Improved pumping strategy for ion implanter end stations

Content Provider	IEEE Xplore Digital Library
Author	Lessard, P.A. Ash, G.S. Unger, R.
Copyright Year	1996
Description	Author affiliation: CTI-Cryogenics, Mansfield, MA, USA (Lessard, P.A.)
Abstract	The variety and complexity of ion implants required in modern semiconductor fabrication has placed increasing burdens on high vacuum pumps on the end stations of implanters. More high energy and high current implants, combined with increasingly stringent process requirements for greater uniformity of implant and higher product throughput, mean a requirement for a pumping scheme that yields high speed (and, more importantly, constancy of speed), while maintaining high tool availability. In this paper, we trace the logic that leads to these requirements and describe the resultant pumping scheme that uses high hydrogen speed cryopumps, a regeneration scheduling strategy that minimizes tool downtime, and improved regeneration methodologies that restore full pump capacity and speed in minimum time. When applied to operating fab tools, these techniques have resulted in significantly increased implanter availability, as well as improved process results.
Starting Page	387
Ending Page	389
File Size	301094
Page Count	3
File Format	PDF
ISBN	078033289X
DOI	10.1109/IIT.1996.586357
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-06-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hydrogen Implants Resists Cryogenics Geometry Ash Fabrication Throughput Availability Logic
Content Type	Text
Resource Type	Article

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