NDLI: Investigation of negative charging with plasma flood gun (PFG) during high current implantation

Content Provider	IEEE Xplore Digital Library
Author	Mehta, S. Axan, B. Walther, S. Felch, S.
Copyright Year	1996
Description	Author affiliation: Varian Ion Implant Syst., Gloucester, MA, USA (Mehta, S.)
Abstract	Implantation of semiconductor devices at very high beam currents can often lead to device damage due to charging. Depending upon the implant conditions, type of charge control system used and the device being implanted, the damaging field can be positive, or of negative polarity. While conventional secondary electron flood guns (EFG) have helped in addressing the concern of positive charging to some degree, the risk of negative charging persists due to the inherent high energy electrons present with this approach. Commercial high current implanters are now being increasingly configured with plasma based flood guns to overcome the concern of negative charging. This paper presents the first account of studies to investigate the negative charging aspect with PFG using charge-sensitive devices. Breakdown Voltage (V/sub bd/) measurements have been made for devices with various gate oxide thicknesses (60 /spl Aring//spl sim/235 /spl Aring/) on N and P-type substrates implanted on high current implanters with both EFG and PFG systems and the results compared.
Starting Page	73
Ending Page	76
File Size	412196
Page Count	4
File Format	PDF
ISBN	078033289X
DOI	10.1109/IIT.1996.586128
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-06-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Floods Plasma devices Plasma measurements Semiconductor devices Lead compounds Implants Control systems Electron guns Plasma applications Current measurement
Content Type	Text
Resource Type	Article

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