NDLI: Damage behaviour and annealing of germanium implanted 6H-SiC

Content Provider	IEEE Xplore Digital Library
Author	Pacaud, Y. Hera, V. Yankov, R.A. Kogler, R. Brauer, G. Voelskow, M. Skorupa, W. Stoemenos, J. Perez-Rodriguez, A. Calvo-Barrio, L. Serre, C. Morante, J.R. Barklie, R. Collins, M. Holm, B.
Copyright Year	1996
Description	Author affiliation: Inst. fur Ionenstrahlphys. und Materialforschung, Forschungszentrum Rossendorf, Dresden, Germany (Pacaud, Y.)
Abstract	The present paper reports a study of the defect reduction and recrystallisation during annealing of Ge/sup +/-implanted 6H-SiC. Implants have been performed at 200 keV with doses of 1/spl times/10/sup 14/ and 1/spl times/10/sup 15/ cm/sup -2/. Furnace annealing has been carried out at temperatures of 500, 950 and 1500/spl deg/C. Several analytical techniques including Rutherford backscattering spectrometry in conjunction with channelling (RBS/C), cross-sectional transmission electron microscopy (XTEM), positron annihilation spectroscopy (PAS), Raman Scattering (RS), and Electron Paramagnetic Resonance (EPR) measurements have been employed for sample characterisation. It has been shown that damage removal is more complicated than in ion-implanted Si. Using PAS deeply diffusing vacancy-like defects were found far below the region defined by TRIM as containing the maximum amount of nuclear energy deposition. The amorphised SiC is characterised by carbon dangling bonds as revealed by EPR. The recrystallisation of amorphised SiC layers has been found to be unsatisfactory for temperatures up to 1500/spl deg/C. The use of ion-beam-induced epitaxial crystallisation (IBIEC) has been more successful as lattice regrowth, although still imperfect, has been observed to occur at a temperature as low as 500/spl deg/C.
Starting Page	713
Ending Page	716
File Size	478048
Page Count	4
File Format	PDF
ISBN	078033289X
DOI	10.1109/IIT.1996.586522
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-06-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Germanium Spectroscopy Temperature Raman scattering Paramagnetic resonance Electrons Silicon carbide Implants Furnaces
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Raman scattering analysis of SiGe annealed and implanted layers

Dopant and thermal interaction on SPE formed SiC for NMOS performance enhancement

Phase relationship between 3c- and 6h-silicon carbide at high pressure and high temperature.

Nitrogen implanted high voltage, planar, 6H-SiC N/sup +/-P junction diodes

Gettering of threading dislocations and oxide precipitates in SIMOX material

Nitrogen-implanted SiC diodes using high-temperature implantation

Characterization Of Damage Of Ion Implanted Silicon By Thermal Wave Technology And Scanning Raman Microscopy

Ion-implanted base SiGe PNP self-aligned SEEW transistors

Transient enhanced diffusion in low energy arsenic implanted silicon

Damage behaviour and annealing of germanium implanted 6H-SiC

Similar Documents

Raman scattering analysis of SiGe annealed and implanted layers

Dopant and thermal interaction on SPE formed SiC for NMOS performance enhancement

Phase relationship between 3c- and 6h-silicon carbide at high pressure and high temperature.

Nitrogen implanted high voltage, planar, 6H-SiC N/sup +/-P junction diodes

Gettering of threading dislocations and oxide precipitates in SIMOX material

Nitrogen-implanted SiC diodes using high-temperature implantation

Characterization Of Damage Of Ion Implanted Silicon By Thermal Wave Technology And Scanning Raman Microscopy

Ion-implanted base SiGe PNP self-aligned SEEW transistors

Transient enhanced diffusion in low energy arsenic implanted silicon

Damage behaviour and annealing of germanium implanted 6H-SiC