NDLI: A novel low energy ion gun for ultra-shallow dopant depth profiling

Content Provider	IEEE Xplore Digital Library
Author	Inoue, M. Shimizu, R. Mizuhara, Y. Takai, Y. Sato, T. Uta, K.
Copyright Year	2002
Description	Author affiliation: Setsunan Univ., Osaka, Japan (Inoue, M.)
Abstract	Ultra-shallow dopant depth profiling has been attracting more and more attention. This technique requires, first of all, a specific low energy ion gun which allows sputter-etching to be performed with sub-nm depth resolution. Since the depth-resolution of the sputter-etching profiling is substantially limited by atomic mixing caused by ion bombardment, the use of ion beam of low energies (< 500eV) with high current density is essential for the ultra-shallow dopant depth profiling. For this, several studies of low energy ion gun system have been intensively performed and achieved high depth resolution with considerable success. In the present study, we aimed at further improvement of the specific floating type ion guns, (FLIG), for wider applicability e.g. being attached to conventional surface analytical instruments through an ICF 70 Conflat flange. Performance of the newly developed FLIG was evaluated by attaching it to a scanning Auger electron microprobe, JAMP-10.
Sponsorship	Japan Soc. Appl. Phys. IEEE Electron Device Soc
Starting Page	262
Ending Page	263
File Size	86847
Page Count	2
File Format	PDF
ISBN	4891140313
DOI	10.1109/IMNC.2002.1178643
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-11-06
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ion beams Permanent magnets Ionization Energy resolution Current density Magnetic analysis Instruments Guns Electrons Voltage
Content Type	Text
Resource Type	Article

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