NDLI: Formation of deep sub-micron buried channel pMOSFETs with plasma doping

Content Provider	IEEE Xplore Digital Library
Author	Felch, S.B. Brunco, D.P. Lee, B.S. Ahmad, A. Prall, K. Chapek, D.L.
Copyright Year	1996
Description	Author affiliation: Varian Res. Center, Palo Alto, CA, USA (Felch, S.B.)
Abstract	Plasma Doping (PLAD) is an alternative to conventional beamline ion implantation for the formation of ultra-shallow p/sup +/-n junctions that has been assessed and researched at Varian for several years. In the PLAD process, the silicon wafer to be implanted is placed directly in a plasma containing the desired dopant ions. The wafer is then pulse-biased to a negative potential to accelerate positive dopant ions toward and into the silicon surface. Most of Varian's work to date has used BF/sub 3/ source gas and wafer biases of /spl sim/0.5 to /spl sim/5 kV to implant boron into 150-mm and 200-mm wafers to form ultra-shallow p/sup +/-n junctions. Formation of the ultra-shallow junction depths that are predicted to be needed for 0.18 /spl mu/m technologies (i.e. 60 nm) has been verified by SIMS measurements. Good within-wafer uniformities and wafer-to-wafer repeatability have also been obtained. Deep sub-half micron buried channel pMOSFETs doped at /spl sim/3.5 kV had excellent threshold voltage roll-offs and off-current leakages, high punchthrough resistances, and very good junction leakage characteristics. These results together with the expected small footprint and low cost-of-ownership of such a system make Plasma Doping an attractive doping technique.
Starting Page	753
Ending Page	756
File Size	427834
Page Count	4
File Format	PDF
ISBN	078033289X
DOI	10.1109/IIT.1996.586553
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-06-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Plasma immersion ion implantation Doping Silicon Ion implantation Plasma accelerators Plasma sources Acceleration Implants Boron
Content Type	Text
Resource Type	Article

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