NDLI: In-situ RBS for oxygen ion implantation systems

Content Provider	IEEE Xplore Digital Library
Author	Farley, M. Alien, L.P. Smick, T. Ryding, G. Purser, K.
Copyright Year	1996
Description	Author affiliation: Ibis Technol. Corp., Danvers, MA, USA (Farley, M.)
Abstract	In-situ measurement of backscattered oxygen ions has been studied with the goal of providing real-time in-situ diagnostics of contamination levels during ion implantation. Heavy metal contamination caused by ion beam sputtering of beam defining apertures and beam line construction components is a significant concern for producing high quality SIMOX wafers. If present during implantation, these contaminants will concentrate near the implanted surface with decreasing concentrations down to the end-of-range of the implanted ions, Ultimately, these heavy metals will diffuse to the SOI interfaces and possibly degrade device performance. A 5 mm diameter (2 to 200 /spl mu/A) 65 KeV beam of oxygen ions, used to probe various elemental target materials, produced distinctive edges in the backscattered ion energy spectrum that was measured using an electrostatic analyzer and channeltron detector. Additional samples with thin metal films deposited on silicon substrates were measured showing excellent agreement between theoretical and measured spectra for both thickness and concentration. In this paper we present a description of the experimental apparatus along with the data and analysis. We also discuss the future implementation plans for an in-situ monitor for use in SIMOX implantation.
Starting Page	127
Ending Page	130
File Size	300322
Page Count	4
File Format	PDF
ISBN	078033289X
DOI	10.1109/IIT.1996.586148
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-06-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ion implantation Pollution measurement Structural beams Electrostatic measurements Ion beams Thickness measurement Sputtering Apertures Surface contamination Degradation
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
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