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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Gwilliam, R.M. Anjum, M. Sealy, B.J. Mynard, J.E. Chereckdjian, S. |
| Copyright Year | 1996 |
| Description | Author affiliation: Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK (Gwilliam, R.M.) |
| Abstract | There has been a great deal of interest in the Indium Gallium Arsenide (InGaAs) material system, both lattice matched to Indium Phosphide (InP) as well as material grown pseudomorphically on GaAs because of its importance to optoelectronic devices. In this paper we present some preliminary observations on the electrical properties of In/sub x/Ga/sub 1-x/As on Gallium Arsenide (GaAs) substrate implanted with magnesium with x varying between 0 to 60 atomic %. Our results indicate that p-type activity is difficult to realise in In/sub x/Ga/sub 1-x/As for x>50%. We also report results of tellurium doubly charged implanted into In/sub 0.53/Ga/sub 0.47/As lattice matched to InP. About 600 angstroms of rf sputtered Aluminium Nitride (AlN) encapsulant was used to carry out 30s isochronal anneals in an optical furnace at temperatures of 600, 700 and 800/spl deg/C. Differential Hall effect measurements were performed to provide dopant depth profiles. Good dopant activation and mobilities were obtained. |
| Starting Page | 702 |
| Ending Page | 704 |
| File Size | 268541 |
| Page Count | 3 |
| File Format | |
| ISBN | 078033289X |
| DOI | 10.1109/IIT.1996.586513 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1996-06-16 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Magnesium Tellurium Indium phosphide Gallium arsenide Indium gallium arsenide Lattices Optoelectronic devices Aluminum Annealing Furnaces |
| Content Type | Text |
| Resource Type | Article |
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