NDLI: Effect of additional low temperature RTA on ultra-shallow p/sup +/-n junction formation

Content Provider	IEEE Xplore Digital Library
Author	Kil-Ho Lee Jae-Geun Oh Byung-Jin Cho Jong-Choul Kim
Copyright Year	1996
Description	Author affiliation: Memory R&D Div., Hyundai Electron. Ind. Co. Ltd., Kyoungki, South Korea (Kil-Ho Lee)
Abstract	The effect of Additional Low Temperature RTA process (ALTRTA) prior to furnace annealing (FA) on shallow junction formation has been investigated. In p/sup +/-n junction implanted by BF/sub 2/ at 20 keV with a dose of 3/spl times/10/sup 15/ ions/cm/sup 2/, it was found that ALTRTA at 950/spl deg/C for 5 sec before FA at 850/spl deg/C for 60 min decreased the junction depth, sheet resistance and junction leakage current by 10%, 2%, and 83.7%, respectively compared to conventional FA process. As FA time increased, the retardation of boron diffusion by ALTRTA was more prominent. Cross-sectional TEM study showed that the density and size of dislocation in ALTRTA sample were reduced. Therefore, it is speculated that the density reduction of Si-interstitial due to point defect recombination (Interstitial+Vacancy=0) during ALTRTA retards the boron diffusion, and reduces junction leakage current. The effective ALTRTA condition was found to depend on ion implantation energy and/or dose, and the lower ion implantation energy and/or dose required the lower RTA temperature. From the results, the ALTRTA process prior to FA for BPSG flow is very effective for the formation of ultra-shallow junction with the improvement of junction characteristics.
Starting Page	634
Ending Page	637
File Size	423941
Page Count	4
File Format	PDF
ISBN	078033289X
DOI	10.1109/IIT.1996.586482
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-06-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature Annealing Boron Ion implantation Electrical resistance measurement Probes Current measurement Leakage current Diodes Furnaces
Content Type	Text
Resource Type	Article

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