NDLI: Low dose performance of a high current ion implanter in production

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Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)

Proceedings of 11th International Conference on Ion Implantation Technology

Proceedings of 11th International Conference on Ion Implantation Technology

Ion implant related trends in devices and process engineering

Life below 1 keV ~ion implantation\

Suppression of ion-induced charge collection against soft-error

Process architectures using MeV implanted blanket buried layers for latch-up improvements on bulk silicon

Current and emerging production applications/trends of MeV technology

Epi avoidance for CMOS logic devices using MeV implantation

Evaluation of Si pre-amorphization for obtaining ultra-shallow junctions

Effect of F on B penetration through gate oxide for BF/sub 2/ implants used to obtain ultra-shallow junctions by RTA

Comparison of zero degree and tilted arsenic MDD implants

A recent study of the formation of SIMOX/SOI materials and their device applications

Synthesis of Si/Si/sub 1-x/Ge/sub x//Si heterostructures for device applications using Ge/sup +/ implantation into silicon

H/sup +/ implantation in Si for the void cut SOI manufacturing

Ion implantation damage in quarter micron CMOS technology

Beam-plasma concepts for wafer charging control during ion implantation

Wafer charge neutralization systems-simulation and experiment

A study of wafer charging with CHARM and SPIDER monitors

A study of wafer charging with CHARM-2 and large area capacitor monitors

Gate oxide damage measured with a unique GOI structure

Investigation of negative charging with plasma flood gun (PFG) during high current implantation

Short loop monitor for charging damage in implantation process

Charging characteristics of high dose source implants of DMOS devices

Photoresist-enhanced wafer charging during high current ion implantation

Influence of photoresist on wafer charging during high current arsenic implant

Enhanced ion implantation charging damage on thin gate oxide due to photoresist

Effects of beam energy purity on junction depths in submicron devices

Energy contamination from multiple-charged ion implantation in conventional implanter

Charge exchange effects in production high energy implanter dosimetry

Purity of low energy beams in R.F. linear accelerator based implanters

Characterizing energy contamination mechanisms in multiply charged ion beams

Anomalous peaks in mass spectra; effects of pre-analysis dissociation and charge exchange events

Mechanisms of elemental contamination in ion implantation equipment

Applications of surface analytical techniques for metals reduction in ion implantation

In-situ RBS for oxygen ion implantation systems

Use of accelerator mass spectrometry for trace element detection

Tungsten contamination in BF/sub 2/ implants

Metals-contamination-reduction program for the Varian EHP-220/500 medium-current ion implanter

Metals contamination reduction on the NV-8200P

Dopant cross-contamination reduction with a 3-position beamstop

High current implanter dopant cross-contamination and its control

A new, in-line method for separating frontside/backside metalilic contamination from implantation

Elemental analysis of ion implantation added particles

Replacing silicon monitors with in situ particle monitoring in the GSD200 ion implanter

Minimizing particle contamination in high current ion implanters

Particle transport reduction in a serial high current implanter

Backside particle reduction on PI9500 series ion implanter

Photoresist integrity during high energy implant

UV curing and photoresist outgassing in high energy implantation

Thick photoresist outgassing during MeV implantation (mechanism and impact on production)

Exploration and prevention of photo resist burning in a high current ion implanter

Profile analysis of a 0.25 /spl mu/m CMOS process

Machine and metrology issues for dose accuracy, repeatability, and uniformity of ion implanters

Low dose ion implantation characterization for Vt control

Production implant monitoring using the Therma-Probe 500

Comparison of sensitivity and precision of instruments used for monitoring low dose Si/sup +/ implant uniformity

Dose control of MeV-implantation by photoluminescence heterodyne technique

Dose and damage control of MeV-implants by photothermal heterodyne analysis

Implantation/diffusion process matching characterization via secondary ion mass spectrometry (SIMS)

Micro uniformity in MeV implantation

In-line detection of radial non-uniformity of V/sub T/-adjust implants in 200 mm wafers using Hg-probe C-V carrier depth profiling

A technique for determining beam parallelism on a medium current implanter using the Therma-Wave Therma-Probe

Oxide charging induced by electron exposure in ion implantation: quantification and qualification

Optimal control of ion beam dynamics

Analytical techniques for measuring contamination introduced during ion implantation

Particle-scattering phenomenon of powders caused by charging voltage of the surface during ion implantation

Purity of low energy beams in R.F. linear accelerator based implanters

Characterization of surface barrier effects from Cu-implanted SiO/sub 2//Si interfaces

Cooled electrostatic chuck for high current serial ion implantation

Across-wafer channeling variations on batch implanters: a graphical technique to analyze spinning disk systems

Accurate dose matching measurements between different ion implanters

In-situ ion beam profiling by fast scan sampling

Accurate and precise mass determination for enhanced ion beam tuning efficiency

A novel ion source for high current ion implantation

Enhanced Bernas ion source for the Varian EHP-500 medium-current ion implanter

Advanced microwave ion source for 100 mA-class SIMOX ion implantation

High frequency ion sources for ion implanters-theoretical and practical comparison

Process performance of SDS, high pressure hydrides and solid vaporizer feed materials on a 9500/spl times/R ion implanter

Performance of SDS BF/sub 3/ vs. high pressure BF/sub 3/ in ion implantation

Ion implanter testing and process results using low pressure, zeolite-based gas bottles in medium and high current ion implanters

Process performance of SDS, high pressure hydrides and solid vaporizer feed materials on a 9500/spl times/R ion implanter

SDS/sup TM/ gas source feed material systems for ion implantation

Optimization of secondary electron flood design for the production of low energy electrons

Resistive deceleration in the xRLEAP implanter

Low energy beam extraction in terms of magnetic field, electric field and ion optics

Energy values of very low-energy ion beams

Novel ion beam extraction assembly with improved lifetime for high current, low energy ion implanters

Negative-ion production of reactive elements from compound gases in the RF plasma-sputter-type heavy negative-ion source

Multicharged boron ions from pure elements evaporated in a 2.45-GHz ECR source

Ion optics of parallel scan implanter using two octupole deflectors

Production proven electrostatic platen for medium current implantation

End station and beam line design considerations for photoresist outgassing with high energy (MeV) ion implantation

Moore's law: implications for ion implant equipment an equipment designer's perspective

Two-dimensional beam plasma parameter maps for secondary electron, plasma bridge, and plasma cell floods

3D simulation code for the modelling of beam line optics

Purity of high energy beams in R.F. linear accelerator based implanters

LINAC simulation for high energy ion implantation

Introducing the NV-GSD/VHE very high energy implanter

Some basic considerations of sector magnets

Low energy beam extraction in terms of magnetic field, electric field and ion optics

Improved pumping strategy for ion implanter end stations

A beam line test stand for automation and ion source developments

Bernas source for the Precision Implant 9200

The ion beam optics of a single wafer high current ion implanter

Compact broad beam ion implantation of 25 keV N/sup +/ in silicon

Ion source improvement program for the Varian VIISion ion implanter

Bernas ion source for Genus Tandetron ion implanters

A fast-response dual-crucible vaporizer for the Genus 1510/1520 MeV ion implanters

Performance and lifetime of the extended life ion source

Effects of mixing low-Z gases on a 2.45-GHz multiply charged ion source

Efficient medium current He/sup +/ beam extraction sustained by auxiliary plasma formation in the ion source by solid material

Beam current and source life enhancement of the Bernas ion source for the Precision Implant 9500xR and xR80

Plasma flood system for the Precision Implant 9200

Plasma flood system-physics of low energy electron generation, plasma coupling, electron transport and surface charge neutralization on wafer

The Ibis 1000 SIMOX production implanter

Implant 9500xR: a high productivity implantation system for 5E10-1E16 ion.cm/sup -2/ dose and 5 keV-750 keV energy applications

The beam performance of the Genus Tandetron 1520 MeV implanter

Factors affecting the design of the Applied Materials xR80 implant family

The VIISion 80 and VIISion 200 ion implanter beam lines

Performance characteristics of the Genus Inc. Tandetron/sup TM/ 1520 MeV ion implantation system

Scanned area and batch size effects on productivity for 150, 200 and 300 mm wafers

Productivity brush-up of the Nissin EXCEED2000 medium current implanter

The VIISion 80 and VIISion 200: high current ion implantation systems for greater throughput with excellent performance at low to high doses

The Applied Materials xRLEAP ion implanter for ultra shallow junction formation

Ion implant COO modeling: does it give us what we want?

Charge state contamination during ion implantation of triply charge phosphorus

Enhanced utilization of SDS cylinder gases on the Eaton NV 8200P ion implanter

Implementation of a universal exhaust solution for implanter fire prevention

Low dose performance of a high current ion implanter in production

The use of a high current implanter for 5E10-E12 dose range implants

Thermawave/sup TM/ and substrate considerations for low dose implants

On board statistical process control on the NV-GSD series ion implanter

Complete management of implant misprocessing risk through computer automation

Experimental design for equipment qualification and matching

Ion implanter diagnostics using SurfaceSIMS

The effect of beam scanning methods in process transfer

Manufacturing advantages of single wafer high current ion implantation

Low energy, low dose performance of a high energy implanter

Range and damage distributions in ultra-low energy boron implantation into silicon

Characterizing crystal lattice damage in high energy implants using interference contrast microscopy

Molecular dynamics simulation of low energy boron and arsenic implant into silicon

Understanding implant damage by implant channeling profile measurements

An electronic stopping power model for Monte Carlo and molecular dynamics simulation of ion implantation into silicon

An accurate Monte Carlo binary collision model for BF/sub 2/ implants into (100) single-crystal silicon

Comparisons of UT-MARLOWE predictions of implant-induced damage with experimentally measured amorphous layer thicknesses

A physical model for the role of dose and dose rate on amorphous depth generation

Detailed analysis and computationally efficient modeling of ultra-shallow as-implanted profiles obtained by low energy B, BF/sub 2/, and As ion implantation

An accurate and computationally efficient model for phosphorus implants into (100) single-crystal silicon

Ranges and moments of depth distributions of boron and phosphorus implanted into silicon in the energy range 1.7-5.0 MeV with an Eaton NV-GSD/VHE implanter

Medium and high energy phosphorus implants into silicon

Nondestructive determination of boron doses in semiconductor materials using neutron depth profiling

SIMS and modeling of ion implants into photoresist

Wafer temperature and stress profiles in an MeV ion implanter using the finite-element method

Effects of He-ion irradiation on the thermal depth profile of nickel

Removal of hydrogen from 2H::Si(100) by sputtering and recoil implantation

Low energy Ar/sup +/ cleaning, damage and sputtering of InP{100} surfaces

A review of SIMS techniques for characterization of ultra low energy ion implants

Analysis of sub-1 keV implants in silicon using SIMS, SRP, MEISS and DLTS: the xRLEAP low energy, high current implanter evaluated

Ultra-shallow junction formation using very low energy B and BF/sub 2/ sources

Fluorine effects in BF/sub 2//sup +/ implants at various energies

Role of silicon surface in the removal of point defects in ultra-shallow junctions

The effect of end of range loops on transient enhanced diffusion in Si

TED of boron in presence of EOR defects: the role of the evolution of Si self-interstitial supersaturation between the loops

Transient enhanced diffusion and defect studies in B implanted Si

A comparison of boron and phosphorus diffusion and dislocation loop growth from silicon implants into silicon

Effect of additional low temperature RTA on ultra-shallow p/sup +/-n junction formation

Energy dependence of transient-enhanced-diffusion in low energy high dose arsenic implants in silicon

N-channel MOS FET degradation by source/drain implantation

Surface and interface roughness after thermal oxidation of As, B and Si implanted silicon wafers

Annealing effects on surface morphology of Si(100)

Al precipitate evolution in epitaxial silicon layers induced by thermal oxidation

Leakage current evaluation for pn junctions formed in DC and RF MeV ion implanted wells

Annealing behavior of a doubly MeV implanted silicon

Carbon co-implantation for ultra-shallow P/sup +/-N junction formation

The lifetime distribution of excess carriers in H/sup +/ ion implanted silicon by photoconductive frequency resolved spectroscopy

The effect of radiation defects on the localization of nitrogen implanted into silicon

TEM investigation of C-Si defects in carbon implanted silicon

Impurity gettering in damaged regions of Si produced by high energy ion implantation

Silicon ion beam epitaxy

SiGe and SiGeC surface alloy formation using high dose implantation and solid phase epitaxy

Effects of ion beam mixing on the formation of SiGe nanocrystals by ion implantation

Activation study of boron doped ion beam synthesised Si-Ge

Ion implantation induced damage in relaxed Si/sub 1-x/Ge/sub x/

Electrical characterisation of magnesium and tellurium implanted indium gallium arsenide

Implant activation and redistribution of dopants in GaN

Ion beam synthesis of SiC in silicon-on-insulator

Damage behaviour and annealing of germanium implanted 6H-SiC

Ion beam induced deposition of tungsten on silicon

A study on the As redistribution in /spl beta/-FeSi/sub 2/ film prepared by reactive deposition epitaxy

Ferromagnetic resonance investigations of ion beam modified Fe- and FeNi-films

In-plane texture study of the yttria-stabilized zirconia films fabricated by ion-beam-assisted deposition

Toughening of thin films by high energy ion beams

Proximity gettering of iron in separation-by-implanted-oxygen wafers

Suppression of oxidation enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFETs with carbon implanted channels

Source/drain profile engineering with plasma implantation

Materials properties of B-doped Si by low energy plasma source ion implantation

Formation of deep sub-micron buried channel pMOSFETs with plasma doping

Ion implantation by plasma immersion technique

Application of a pulsed, RF-driven, multicusp source for low energy plasma immersion ion implantation

Operational phase-space of separation by plasma implantation of oxygen (SPIMOX)

Cluster ion implantation for shallow junction formation

Shallow junction formation by polyatomic cluster ion implantation

Molecular Ion Implantation Technique For Obtaining The Same Depth Profile For The Component Atoms

Ion implantation of large wafers and flat panel displays

Effect of antenna structures on charging damage in PIII

The effect of wells on gate oxide charging during plasma processing

Reduction of lateral parasitic current flow by buried recombination layers formed by high energy implantation of C or O into silicon

Buried layer/connecting layer high energy implantation for improved CMOS latch-up

Development of ECR sheet plasma source for ion-enhanced reactive sputter deposition

New developments in SDS gas source technology for ion implantation

Surface processing by gas cluster ion beams

Self-supporting thin Si single crystals produced by ion implantation and selective etching techniques and several applications

Characterization of P/sup +/ implanted SiO/sub 2/ powders

New developments in SDS gas source technology for ion implantation

Ion beam synthesis of nanocrystals and quantum dots in optical materials

Molecular ion implantation technique for obtaining the same depth profile for the component atoms

Low dose performance of a high current ion implanter in production

Content Provider	IEEE Xplore Digital Library
Author	St. Angelo, D.A. Rendon, M.J. Dyer, D.E. Breeden, T.A.
Copyright Year	1996
Description	Author affiliation: Semicond. Equipment Oper., Eaton Corp., Austin, TX, USA (St. Angelo, D.A.)
Abstract	The ion implant dose requirements of a modern semiconductor manufacturing product flow span a range of approximately 1E11 cm/sup -2/ to 1E16 cm/sup -2/. High current implanters are typically operated in applications that require doses greater than 1E14 cm/sup -2/. The low dose capability of a high current ion implanter is demonstrated for doses less than 5e12 cm/sup -2/ and beam currents less than 25 uA. The performance is studied using various metrology tools and verified using device data from a CMOS integrated circuit manufacturing process. Thermal wave and optical densitometry sensitivity and repeatability is determined over various time intervals. Adjusting threshold voltage with ion implantation is discussed.
Starting Page	490
Ending Page	493
File Size	400335
Page Count	4
File Format	PDF
ISBN	078033289X
DOI	10.1109/IIT.1996.586407
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-06-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Production Implants Semiconductor device manufacture Metrology CMOS integrated circuits Manufacturing processes Particle beam optics Optical sensors Threshold voltage Ion implantation
Content Type	Text
Resource Type	Article

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