NDLI: Effect of adhesive layer properties on interfacial fracture in thin-film high-density interconnects

Content Provider	IEEE Xplore Digital Library
Author	Modi, M. Sitaraman, S.K.
Copyright Year	2002
Description	Author affiliation: Comput.-Aided Simulation of Packaging Reliability Lab., Georgia Inst. of Technol., Atlanta, GA, USA (Modi, M.; Sitaraman, S.K.)
Abstract	Delamination of intrinsically stressed films is commonly encountered in microelectronic systems. Thin films deposited through physical vapor deposition processes typically accrue intrinsic stresses through the micro structural variations caused by deposition or through thermally induced stresses imposed during cool-down from deposition temperatures. These intrinsic stresses can have a peak magnitude upwards of I GPa. To help prevent delamination, Ti or Cr "adhesive" layers, with microscale or nanoscale thickness, are used to increase the adhesion between the thin film and substrate. This study applies the Finite Element Method (FEM) to study the resistance to delamination of an innovative, stress-engineered, thin film interconnect. Adhesive layer parameters such as thickness, deposition-induced intrinsic stress, and material properties are examined. Fracture criteria (energy release rate and mode mixity) are used to quantify the effect of varying adhesive layer properties on interfacial fracture. The finite element study results are compared to a previously developed plate theory model, which does not account for the large deflection present in highly stressed film delamination. To determine whether a delamination will propagate, it is imperative that the interfacial fracture toughness be experimentally measured for the interface under study. Experimental measurement of interfacial fracture toughness and the associated mode mixity is currently a challenge for thin film interfaces. In addition to the numerical simulation, this paper discusses modifications to the decohesion test that yields a method that can tightly bound the interfacial fracture toughness using a single test wafer. Further it is a method that uses common IC fabrication techniques, can achieve low mode mixities easily and efficiently, and can be used with titanium interfaces. Results for Ti/Alumina interfacial fracture toughness are discussed and applied to the numerical study.
Sponsorship	IEEE Components, Packaging, & Manuf. Technol. Soc. Electronic Components, Assemblies & Mater. Assoc
Starting Page	847
Ending Page	853
File Size	802487
Page Count	7
File Format	PDF
ISBN	0780374304
ISSN	05695503
DOI	10.1109/ECTC.2002.1008199
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-28
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transistors Delamination Thermal stresses Finite element methods Testing Microelectronics Sputtering Chemical vapor deposition Temperature Chromium
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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