NDLI: A wideband anti-high-overload thermoelectric microwave power sensor based on GaAs MMIC technology

Content Provider	IEEE Xplore Digital Library
Author	Wang, D.B. Liao, X.P.
Copyright Year	2011
Description	Author affiliation: Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu province, China (Wang, D.B.; Liao, X.P.)
Abstract	In this work, a wideband anti-high-overload thermoelectric microwave power sensor based on GaAs MMIC technology is proposed to overcome the deficiency of poor overload and easy burning. This power sensor contains two sections: the microwave power measurement section and the anti-high-overload section. The anti-high-overload principle is realized by the capacitive coupling of a cantilever beam over a CPW line which transfers the overload energy. This power sensor is measured in the frequency range up to 30 GHz with an input power in the 100 mW range. Over the 100 mW dynamic range, the sensitivity is about 0.358, 0.255, 0.184 and 0.102 mV/mW at 1, 10, 20 and 30 GHz, respectively, with the excellent linearity. The response time of this power sensor is about 9 ms. In addition to excellent linearity, broadband performance and anti-high-overload capability, another significant advantage is that this power sensor can be integrated with MMICs and other planar connecting circuit structures.
Starting Page	32
Ending Page	35
File Size	1226248
Page Count	4
File Format	PDF
ISBN	9781457701573
e-ISBN	9781457701566
DOI	10.1109/TRANSDUCERS.2011.5969125
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-05
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MMICs Gold Energy measurement Attenuation measurement Thermal sensors Bonding Micromechanical devices GaAs MMIC Wideband Anti-high-overload power sensor
Content Type	Text
Resource Type	Article

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