NDLI: Ambipolar Si nanowire field effect transistors for low current and temperature sensing

Content Provider	IEEE Xplore Digital Library
Author	Sacchetto, D. De Micheli, G. Leblebici, Y.
Copyright Year	2011
Description	Author affiliation: EPFL - Ecole Polytechnique Fédérale, Lausanne, Vaud, SWITZERLAND (Sacchetto, D.; De Micheli, G.; Leblebici, Y.)
Abstract	This paper reports on the fabrication and characterization of a pA current and temperature sensing device with ultra-low power consumption based on a Schottky barrier silicon nanowire transistor. Thermionic and trap-assisted tunneling current conduction mechanisms are identified and discussed on the base of the device sensitivity upon current and temperature biasing. In particular, very low current sensing properties are confirmed also with previously reported polysilicon-channel nanowire Schottky barrier transistors. demonstrating that these devices are suitable for temperature and current sensing applications. Moreover, the process flow compatibility for both sensing and logic applications makes these devices suitable for heterogeneous integration.
Starting Page	2562
Ending Page	2565
File Size	956608
Page Count	4
File Format	PDF
ISBN	9781457701573
e-ISBN	9781457701566
DOI	10.1109/TRANSDUCERS.2011.5969815
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-05
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Schottky barriers Silicon Temperature sensors Logic gates Tunneling FETs ambipolar Schottky barrier sensing nanowire FET
Content Type	Text
Resource Type	Article

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