NDLI: Improved reliability of SiC pressure sensors for long term high temperature applications

Content Provider	IEEE Xplore Digital Library
Author	Okojie, R.S. Nguyen, V. Savrun, E. Lukco, D.
Copyright Year	2011
Description	Author affiliation: ASRC Research Corp., NASA Glenn Research Center, Cleveland, OH, USA (Lukco, D.) \|\| NASA Glenn Research Center, Cleveland, OH, USA (Okojie, R.S.) \|\| Sienna Technologies, Inc. Woodingville, WA, USA (Nguyen, V.; Savrun, E.)
Abstract	We report advancement in the reliability of silicon carbide pressure sensors operating at 600 °C for extended periods. The large temporal drifts in zero pressure offset voltage at 600 °C observed previously were significantly suppressed to allow improved reliable operation. This improvement was the result of further enhancement of the electrical and mechanical integrity of the bondpad/contact metallization, and the introduction of studded bump bonding on the pad. The stud bump contact promoted strong adhesion between the Au bond pad and the Au die-attach. The changes in the zero offset voltage and bridge resistance over time at temperature were explained by the microstructure and phase changes within the contact metallization, that were analyzed with Auger electron spectroscopy (AES) and field emission scanning electron microscopy (FE-SEM).
Starting Page	2875
Ending Page	2878
File Size	4315431
Page Count	4
File Format	PDF
ISBN	9781457701573
e-ISBN	9781457701566
DOI	10.1109/TRANSDUCERS.2011.5969561
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-05
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature sensors Gold Silicon carbide Resistance Temperature measurement Metallization Reliability Silicon Carbide High Temperature Pressure Sensor Offset Voltage Drift
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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