NDLI: Silicon carbide pressure sensor for high temperature and high pressure applications: Influence of substrate material on performance

Content Provider	IEEE Xplore Digital Library
Author	Sheng Jin Rajgopal, S. Mehregany, M.
Copyright Year	2011
Description	Author affiliation: Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, OH, USA (Rajgopal, S.; Mehregany, M.) \|\| Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, USA (Sheng Jin)
Abstract	We have studied the effect of substrate material related to thermal mismatch for silicon carbide (SiC) diaphragm-based capacitive pressure sensors. Two sets of devices, with identical dimensions and fabrication processes were made on poly-SiC and Si substrates. Designed for a maximum pressure of 4.83 MPa (700 psi), these devices were operated in small-deflection mode and tested at room temperature and 500oC. At room temperature, the SiC- and Si-substrate devices showed sensitivities of 6.5E-04 and 6.1E-04 fF/Pa, nonlinearities of 5.0% and 3.9%, and resolutions of 0.2% and 0.3%, respectively. At 500oC, the SiC- and Si-substrate devices showed sensitivities of 1.2E-02 and 1.1E-02 fF/Pa, nonlinearities of 2.6% and 3.8%, and resolutions of 0.5% and 1.8%, respectively. For the chosen design parameters, the results show little influence of substrate material on sensor performance.
Starting Page	2026
Ending Page	2029
File Size	873921
Page Count	4
File Format	PDF
ISBN	9781457701573
e-ISBN	9781457701566
DOI	10.1109/TRANSDUCERS.2011.5969209
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-06-05
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon carbide Substrates Silicon Temperature sensors Stress Thermal stresses Capacitance thermal mismatch SiC capacitive pressure sensor high temperature
Content Type	Text
Resource Type	Article

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