NDLI: Progresses in large dynamic range silicon photomultipliers with bulk quenching resistor

Content Provider	IEEE Xplore Digital Library
Author	Chenhui Li Zongde Chen Yongzheng Li Baicheng Li Kaijun Wang Kun Liang Ru Yang Dejun Han
Copyright Year	2013
Description	Author affiliation: Key Lab. of Beam Technol. & Mater. Modification of the Minist. of Educ., Beijing Normal Univ., Beijing, China (Chenhui Li; Zongde Chen; Yongzheng Li; Baicheng Li; Kaijun Wang; Kun Liang; Ru Yang; Dejun Han)
Abstract	Silicon photomultiplier (SiPM) with bulk quenching resistor is one of the main SiPM technologies now under researches and developments. The device was first demonstrated at the Novel Device Laboratory (NDL). It has advantages of high micro cell density, short recovery time and has potential to alleviate the conflict between the high photon detection efficiency (PDE) and large dynamic range encountered by conventional SiPM, and it is beneficial to be applied in HEP calorimeters, PET, scintillator readout, radiation monitors and spectroscopy analysis, where high space resolution, large dynamic range and adequate high PDE are mandatory needed simultaneously. In the past years, with the optimization of the fabrication technology and structure of the device, the active area of the device has been increased from 1 mm × 1 mm to 2.2 mm × 2.2 mm, the peak PDE has been increased from 8% to 13%, while the density of the micro cells remains as large as $9000/mm^{2}$ and the recovery time remains to as low as ~5ns. Application of the device to the detection of natural background radiation by using a lutetium orthosilicate (LSO) scintillator has been performed. Energy resolution of 1-to-1 coupling of this device and a 2 mm × 2 mm × 10 mm lutetium yttrium oxyorthosilicate (LYSO) crystal yielded an energy resolution of 11.8% by using radiation sources of $^{137}Cs$ (662keV photons) without any high speed preamplifiers. These latest developments of SiPM with bulk quenching resistor will be presented in this record.
Starting Page	1
Ending Page	4
File Size	1190784
Page Count	4
File Format	PDF
e-ISBN	9781479905348
DOI	10.1109/NSSMIC.2013.6829684
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-10-27
Publisher Place	South Korea
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photonics Resistors Dynamic range Energy resolution Silicon Physics Positron emission tomography
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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