NDLI: An overview of application of 4H-SiC n-type epitaxial Schottky barrier detector for high resolution nuclear detection

Content Provider	IEEE Xplore Digital Library
Author	Mandal, K.C. Chaudhuri, S.K. Khai Nguyen
Copyright Year	2013
Description	Author affiliation: Electr. Eng. Dept., Univ. of South Carolina, Columbia, SC, USA (Mandal, K.C.; Chaudhuri, S.K.; Khai Nguyen)
Abstract	Availability of high-quality bulk and epitaxial 4H-SiC has revived the feasibility of fabrication of nuclear radiation detectors which are compact, operable at room or elevated temperature, physically rugged, and radiation hard. SiC detectors have been demonstrated as excellent alpha particle detectors and hence are being considered as compact neutron detectors when coupled with neutron-alpha conversion layers. Our group at University of South Carolina has successfully demonstrated the fabrication of large area (~11 $mm^{2})$ 4H-SiC epitaxial surface barrier type sensors, for detection of x-rays of energy as low as 50 eV with very high responsivity, high resolution detection of low energy gamma rays (2.1% FWHM for 59.6 keV gamma rays) and very efficient and high-resolution alpha particle detection. We have recently fabricated surface barrier detectors for alpha particles with an energy resolution of 0.29% for 5.48 MeV alpha particles, the best value reported till date, with a charge collection efficiency (CCE) ~100%. These detectors have also shown a CCE more than 57% at zero applied bias for 5.48 MeV alpha particles which opens up the possibility of highly efficient bias-less operation, a much sought-after quality for field deployment of stand-off detection system for Homeland security applications. We have performed a noise analysis in terms of equivalent noise charge and we have found that the white series noise due to the detector capacitance has substantial effect on their spectroscopic performance. We have also studied the effect of the presence of electrically active defects on detector performance using deep level transient spectroscopy measurements.
Starting Page	1
Ending Page	6
File Size	776472
Page Count	6
File Format	PDF
e-ISBN	9781479905348
DOI	10.1109/NSSMIC.2013.6829844
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-10-27
Publisher Place	South Korea
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Detectors Noise Alpha particles Energy resolution Temperature measurement Schottky barriers Silicon carbide
Content Type	Text
Resource Type	Article

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Correlation of Deep Levels With Detector Performance in 4H-SiC Epitaxial Schottky Barrier Alpha Detectors

Improved n-Type 4H-SiC Epitaxial Radiation Detectors by Edge Termination

Low Energy X-Ray and $gamma$-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer

High-resolution alpha spectrometry with a thin-window silicon carbide semiconductor detector

The effect of the post-metallization annealing of Ni/n-type 4H-SiC SCHOTTKY contact

Barrier non-uniformity of annealed Ni/4H-SiC Schottky contacts with temperature

Minimum ionizing and alpha particles detectors based on epitaxial semiconductor silicon carbide

Ultra-low Von and High Voltage 4H-SiC Heterojunction Diode

Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes.

An overview of application of 4H-SiC n-type epitaxial Schottky barrier detector for high resolution nuclear detection

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Correlation of Deep Levels With Detector Performance in 4H-SiC Epitaxial Schottky Barrier Alpha Detectors

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