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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yamaji, Y. Yokoshima, T. Igawa, N. Kikuchi, K. Nakagawa, H. Aoyagi, M. |
| Copyright Year | 2008 |
| Description | Author affiliation: High Density Interconnection Group, Nanoelectron. Res. Inst. Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan (Yamaji, Y.; Yokoshima, T.; Igawa, N.; Kikuchi, K.; Nakagawa, H.; Aoyagi, M.) |
| Abstract | A chemical flip-chip bonding method by electroless plating process has been developed. This method positively utilizes so-called "bridge" phenomenon between metal pads in electroless Ni-B plating, and enables bump-less interconnect without loading and/or heating at lower temperature (60°C). The interconnect behavior was examined using test chips and substrates with various pad-to-pad configurations. The result confirmed that effective pad width and a ratio of pad pitch to pad width determine the completeness of the interconnection under the condition that distance between facing pads are sufficiently close. A potential of improved method was also demonstrated for fabricating finer pitch flip-chip interconnect with a minimum pad-pitch of 20 ¿m. |
| Starting Page | 657 |
| Ending Page | 662 |
| File Size | 6016791 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781424421176 |
| DOI | 10.1109/EPTC.2008.4763508 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-12-09 |
| Publisher Place | Singapore |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Wafer bonding Bridges Fabrication Resins Copper Electronic equipment testing Vehicles Chemical processes Heating Bonding processes |
| Content Type | Text |
| Resource Type | Article |
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